74ABT241DB,112

Philips Semiconductors Product specification
74ABT241Octal buffer/line driver (3-State)
1998 Jan 16
3
LOGIC SYMBOL (IEEE/IEC)
1
2 18
4 16
6 14
812
19
17 3
15 5
13 7
11 9
EN
EN
SA00040
LOGIC SYMBOL
1OE
1
1A0
2
1A1
4
1A2
6
1A3
8
2OE
19
2A0
17
2A1
18
15
2A2
13
16
2A3
11
14
12
1Y0
1Y1
1Y2
1Y3
2Y0
2Y1
2Y2
2Y3
3
5
7
9
SA00039
FUNCTION TABLE
INPUTS OUTPUTS
1OE 1An 2OE 2An 1Yn 2Yn
L L H L L L
L H H H H H
H X L X Z Z
H =High voltage level
L =Low voltage level
X =Don’t care
Z =High impedance ”off” state
ABSOLUTE MAXIMUM RATINGS
1,
2
SYMBOL
PARAMETER CONDITIONS RATING UNIT
V
CC
DC supply voltage –0.5 to +7.0 V
I
IK
DC input diode current V
I
< 0 –18 mA
V
I
DC input voltage
3
–1.2 to +7.0 V
I
OK
DC output diode current V
O
< 0 –50 mA
V
OUT
DC output voltage
3
output in Off or High state –0.5 to +5.5 V
I
OUT
DC output current output in Low state 128 mA
T
stg
Storage temperature range –65 to 150 °C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
Philips Semiconductors Product specification
74ABT241Octal buffer/line driver (3-State)
1998 Jan 16
4
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER LIMITS UNIT
Min Max
V
CC
DC supply voltage 4.5 5.5 V
V
I
Input voltage 0 V
CC
V
V
IH
High-level input voltage 2.0 V
V
IL
Low-level Input voltage 0.8 V
I
OH
High-level output current –32 mA
I
OL
Low-level output current 64 mA
t/v Input transition rise or fall rate 0 5 ns/V
T
amb
Operating free-air temperature range –40 +85 °C
DC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL PARAMETER TEST CONDITIONS T
amb
= +25°C
T
amb
= –40°C
to +85°C
UNIT
Min Typ Max Min Max
V
IK
Input clamp voltage V
CC
= 4.5V; I
IK
= –18mA –0.9 –1.2 –1.2 V
V
CC
= 4.5V; I
OH
= –3mA; V
I
= V
IL
or V
IH
2.5 2.9 2.5 V
V
OH
High-level output voltage V
CC
= 5.0V; I
OH
= –3mA; V
I
= V
IL
or V
IH
3.0 3.4 3.0 V
V
CC
= 4.5V; I
OH
= –32mA; V
I
= V
IL
or V
IH
2.0 2.4 2.0 V
V
OL
Low-level output voltage V
CC
= 4.5V; I
OL
= 64mA; V
I
= V
IL
or V
IH
0.42 0.55 0.55 V
I
I
Input leakage current V
CC
= 5.5V; V
I
= GND or 5.5V ±0.01 ±1.0 ±1.0 µA
I
OFF
Power-off leakage current V
CC
= 0.0V; V
I
or V
O
4.5V ±5.0 ±100 ±100 µA
I
PU
/I
PD
Power-up/down 3-State
output current
3
V
CC
= 2.0V; V
O
= 0.5V; V
I
= GND or V
CC
;
V
OE
= V
CC
; V
OE
= GND
±5.0 ±50 ±50 µA
I
OZH
3-State output High current V
CC
= 5.5V; V
O
= 2.7V; V
I
= V
IL
or V
IH
5.0 50 50 µA
I
OZL
3-State output Low current V
CC
= 5.5V; V
O
= 0.5V; V
I
= V
IL
or V
IH
–5.0 –50 –50 µA
I
CEX
Output High leakage current V
CC
= 5.5V; V
O
= 5.5V; V
I
= GND or V
CC
5.0 50 50 µA
I
O
Output current
1
V
CC
= 5.5V; V
O
= 2.5V –50 –100 –180 –50 –180 mA
I
CCH
V
CC
= 5.5V; Outputs High, V
I
= GND or V
CC
50 250 250 µA
I
CCL
Quiescent supply current V
CC
= 5.5V; Outputs Low, V
I
= GND or V
CC
24 30 30 mA
I
CCZ
V
CC
= 5.5V; Outputs 3–State;
V
I
= GND or V
CC
50 250 250 µA
Outputs enabled, one input at 3.4V, other
inputs at V
CC
or GND; V
CC
= 5.5V
0.5 1.5 1.5 mA
I
CC
Additional supply current per
input pin
2
Outputs 3-State, one data input at 3.4V, other
inputs at V
CC
or GND; V
CC
= 5.5V
50 250 250 µA
Outputs 3-State, one enable input at 3.4V,
other inputs at V
CC
or GND; V
CC
= 5.5V
0.5 1.5 1.5 mA
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
3. This parameter is valid for any V
CC
between 0V and 2.1V with a transition time of up to 10msec. For V
CC
= 2.1V to V
CC
= 5V 10%, a
transition time of up to 100 µsec is permitted.
Philips Semiconductors Product specification
74ABT241Octal buffer/line driver (3-State)
1998 Jan 16
5
AC CHARACTERISTICS
GND = 0V; t
R
= t
F
= 2.5ns; C
L
= 50pF, R
L
= 500
LIMITS
SYMBOL PARAMETER WAVEFORM
T
amb
= +25°C
V
CC
= +5.0V
T
amb
= –40°C to +85°C
V
CC
= +5.0V ±0.5V
UNIT
Min Typ Max Min Max
t
PLH
t
PHL
Propagation delay
An to Yn
1
1.0
1.0
2.6
2.7
4.1
4.2
1.0
1.0
4.6
4.6
ns
t
PZH
t
PZL
Output enable time
to High and Low level
2
1.1
1.3
3.2
4.3
6.3
5.8
1.1
1.3
6.8
6.8
ns
t
PHZ
t
PLZ
Output disable time
from High and Low level
2
1.6
1.0
3.6
2.6
6.1
5.4
1.6
1.0
7.1
5.9
ns
AC WAVEFORMS
V
M
= 1.5V, V
IN
= GND to 3.0V
INPUT
1.5V
OUTPUT
t
PLH
t
PHL
SA00028
1.5V
1.5V 1.5V
3 V
0 V
V
OH
V
OL
Waveform 1. Waveforms Showing the Input (An)
to Output (Yn) Propagation Delays
OE INPUT
V
M
V
M
t
PZH
t
PHZ
Yn OUTPUT
V
OH
V
M
V
M
Yn OUTPUT
V
OL
t
PZL
t
PLZ
3.5V
0V
V
OL
+ 0.3V
V
OH
– 0.3V
SA00041
OE INPUT
Waveform 2. Waveforms Showing the 3–State Output
Enable and Disable Times
TEST CIRCUIT AND WAVEFORMS
C
L
= 50 pF
500
Load Circuit
DEFINITIONS
C
L
= Load capacitance includes jig and probe capacitance;
see AC CHARACTERISTICS for value.
TEST S1
t
pd
open
t
PLZ
/t
PZL
7 V
t
PHZ
/t
PZH
open
SA00012
500
From Output
Under Test
S1
7 V
Open
GND

74ABT241DB,112

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
IC BUF NON-INVERT 5.5V 20SSOP
Lifecycle:
New from this manufacturer.
Delivery:
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