MIC2584/2585 Micrel
MIC2584/2585 22 March 2005
Higher UVLO Setting
Once a PCB is inserted into a backplane (power supply), the
internal UVLO circuit of the MIC2584/85 holds the GATE
output charge pump off until VCC1 exceeds 2.165V and
VCC2 exceeds 0.8V. If VCC1 falls below 1.935V or VCC2
falls below 0.77V, the UVLO circuit pulls the GATE output to
ground and clears the overvoltage and/or current limit faults.
For a higher UVLO threshold, the circuit in Figure 10 can be
used to delay the output MOSFET from switching on until the
desired input voltage is achieved. The circuit allows the
charge pumps to remain off until V
IN1
exceeds
1
R1
R2
1.235V+
×
provided that VCC2 has exceeded its
threshold. Both GATE drive outputs will be shut down when
V
IN1
falls below
1
R1
R2
1.21V+
×
. In the example circuit , the
rising UVLO threshold is set at approximately 9.0V and the
falling UVLO threshold is established as 8.9V. The circuit
consists of an external resistor divider at the ON pin that
keeps both GATE output charge pumps off until the voltage
at the ON pin exceeds its threshold (V
ON
) and after the start-
up timer elapses.
Hot Swap Power Control for DSPs
In designing power supplies for dual supply logic devices,
such as a DSP, consideration should be given to the system
timing requirements of the core and I/O voltages for power-
up and power-down operations. When power is provided to
the core and I/O circuit blocks in an unpredictable manner,
the effects can be detrimental to the life cycle of the DSP or
logic device by allowing unexpected current to flow in the core
and I/O isolation structures. Additionally, bus contention is
one of the critical system-level issues supporting the need for
power supply sequencing. Since the core supplies logic
control for the bus, powering up the I/O before the core may
result in both the DSP and an attached peripheral device
being simultaneously configured as outputs. In this case, the
output drivers of each device contend for control over sending
data along the bus which may cause excessive current to flow
in one of the paths (I
1
or I
2
) shown in the bidirectional port of
Figure 11. Upon powering down the system, the core voltage
supply should turn off after the I/O as the bus control signal(s)
may enter an indeterminate state if the core is powered down
first. Thus, for power sequencing of a dual supply voltage
DSP implementing the MIC2585 (if V
CORE
V
I/O
), a circuit
similar to Figure 8 is recommended with the core voltage
supplied through Channel 1 and the I/O voltage supplied
through Channel 2. For systems with V
CORE
< V
I/O
, the
MIC2585-2 option with the I/O voltage through Channel 1 and
core through Channel 2 is used to implement the first on-last
off application.
Sense Resistor Selection
The MIC2584 and MIC2585 use a low-value sense resistor to
measure the current flowing through the MOSFET switch
(and therefore the load). This sense resistor is nominally set
at 50mV/I
LOAD(CONT)
. To accommodate worst-case toler-
ances for both the sense resistor (allow ±3% over time and
temperature for a resistor with ±1% initial tolerance) and still
supply the maximum required steady-state load current, a
slightly more detailed calculation must be used.
The current limit threshold voltage (i.e., the trip point) for the
MIC2584/85 may be as low as 42.5mV, which would equate
to a sense resistor value of 42.5mV/I
LOAD(CONT)
. Carrying the
numbers through for the case where the value of the sense
resistor is 3% high yields:
R
42.5mV
1.03 I
41.3mV
I
SENSE(MAX)
LOAD(CONT)
LOAD(CONT)
=
()
()
=
(11)
Once the value of R
SENSE
has been chosen in this manner,
it is good practice to check the maximum I
LOAD(CONT)
which
the circuit may let through in the case of tolerance build-up in
SENSE1VCC1
ON
FB1
GATE1
GND
Undervoltage Lockout Threshold (rising) = 9.0V
Undervoltage Lockout Threshold (falling) = 8.9V
Undervoltage (Output) = 11.4V
Channel 2 and additional pins omitted for clarity.
Q1
IRF7822
(SO-8)
R3
10
R5
16.2k
1%
R1
154k
1%
R2
24.3k
1%
MIC2584
C1
1µF
D1
(18V)
C2
0.01µF
C
LOAD1
1000µF
R4
133k
1%
V
OUT1
12V@4A
V
IN1
12V
9
16 15
12
6
14
R
SENSE1
0.010
5%
12
34
Figure 10. Higher UVLO Setting
March 2005 23 MIC2584/2585
MIC2584/2585 Micrel
the opposite direction. Here, the worst-case maximum cur-
rent is found using a 57.5mV trip voltage and a sense resistor
that is 3% low in value. The resulting equation is:
I
57.5mV
0.97 R
59.3mV
R
LOAD(CONT,MAX)
SENSE(NOM)
SENSE(NOM)
=
()
()
=
(12)
As an example, if an output must carry a continuous 6A
without nuisance trips occurring, Equation 11
yields:
R
41.3mV
6A
m
SENSE(MAX)
==688.
. The next lowest
standard value is 6m
.
At the other set of tolerance extremes
for the output in question,
I
59.3mV
6.0m
A
LOAD(CONT,MAX)
=
= 988.
. Knowing this final da-
tum, we can determine the necessary wattage of the sense
resistor using P = I
2
R, where
I will be I
LOAD(CONT, MAX)
, and
R will be (0.97)(R
SENSE(NOM)
).
These numbers yield the
following: P
MAX
= (9.88A)
2
(5.82m)
= 0.568W. In this ex-
ample, a 1W sense resistor is sufficient.
MOSFET Selection
Selecting the proper external MOSFET for use with the
MIC2584/85 involves three straightforward tasks:
Choice of a MOSFET which meets minimum
voltage requirements.
Selection of a device to handle the maximum
continuous current (steady-state thermal is-
sues).
Verify the selected parts ability to withstand any
peak currents (transient thermal issues).
MOSFET Voltage Requirements
The first voltage requirement for the MOSFET is easily stated:
the drain-source breakdown voltage of the MOSFET must be
greater than V
IN(MAX)
. For instance, a 12V input may reason-
ably be expected to see high-frequency transients as high as
18V. Therefore, the drain-source breakdown voltage of the
MOSFET must be at least 19V. For ample safety margin and
standard availability, the closest minimum value will be 20V.
The second breakdown voltage criterion that must be met is a
bit subtler than simple drain-source breakdown voltage, but is
not hard to meet. In MIC2584/85 applications, the gate of the
external MOSFET is driven up to approximately 20V by the
internal output MOSFET (again, assuming 12V operation). At
the same time, if the output of the external MOSFET (its source)
is suddenly subjected to a short, the gate-source voltage will go
to (20V 0V) = 20V. This means that the external MOSFET
must be chosen to have a gate-source breakdown voltage of
20V or more, which is an available standard maximum value.
However, if operation is above 12V, the 20V gate-source
maximum will likely be exceeded. As a result, an external Zener
diode clamp should be used to prevent breakdown of the
external MOSFET when operating at voltages above 10V. A
Zener diode with 10V rating is recommended as shown in
Figure 12. At the present time, most power MOSFETs with a
20V gate-source voltage rating have a 30V drain-source break-
down rating or higher. As a general tip, choose surface-mount
devices with a drain-source rating of 30V as a starting point.
Finally, the external gate drive of the MIC2584/85 requires a
low-voltage logic level MOSFET when operating at voltages
lower than 3V. There are 2.5V logic level MOSFETs available.
See Table 5, "
MOSFET and Sense Resistor Vendors
" for
suggested manufacturers.
I
2
TX_/RX
I
1
V
DD
V
DD
CORE SUPPLY
(V
CC
)
OUTPUT
DRIVER
CIRCUIT
BLOCK
OUTPUT
DRIVER
CIRCUIT
BLOCK
Data In
OE
Data Out
External
Bus Control
I/O
Dual Supply DSP Peripheral
CORE
I/O SUPPLY
(V
DD
)
Data In
OE
Data Out
Figure 11. Bidirectional Port Bus Contention
MIC2584/2585 Micrel
MIC2584/2585 24 March 2005
MOSFET Steady-State Thermal Issues
The selection of a MOSFET to meet the maximum continuous
current is a fairly straightforward exercise. First, arm yourself
with the following data:
The value of I
LOAD(CONT, MAX.)
for the output in
question (see "
Sense Resistor Selection
").
The manufacturers data sheet for the candidate
MOSFET.
The maximum ambient temperature in which the
device will be required to operate.
Any knowledge you can get about the heat
sinking available to the device (e.g., can heat be
dissipated into the ground plane or power plane,
if using a surface-mount part? Is any airflow
available?).
The data sheet will almost always give a value of on resis-
tance given for the MOSFET at a gate-source voltage of 4.5V,
and another value at a gate-source voltage of 10V. As a first
approximation, add the two values together and divide by two
to get the on-resistance of the part with 8V of enhancement.
Call this value R
ON
. Since a heavily enhanced MOSFET acts
as an ohmic (resistive) device, almost all thats required to
determine steady-state power dissipation is to calculate I
2
R.
The one addendum to this is that MOSFETs have a slight
increase in R
ON
with increasing die temperature. A good
approximation for this value is 0.5% increase in R
ON
per °C
rise in junction temperature above the point at which R
ON
was
initially specified by the manufacturer. For instance, if the
selected MOSFET has a calculated R
ON
of 10m at a
T
J
= 25°C, and the actual junction temperature ends up
at 110°C, a good first cut at the operating value for R
ON
would be:
R
ON
10m[1 + (110 - 25)(0.005)] 14.3m
The final step is to make sure that the heat sinking available
to the MOSFET is capable of dissipating at least as much
power (rated in °C/W) as that with which the MOSFETs
performance was specified by the manufacturer. Here are a
few practical tips:
1. The heat from a surface-mount device such as
an SO-8 MOSFET flows almost entirely out of
the drain leads. If the drain leads can be sol-
dered down to one square inch or more, the
copper will act as the heat sink for the part. This
copper must be on the same layer of the board
as the MOSFET drain.
2. Airflow works. Even a few LFM (linear feet per
minute) of air will cool a MOSFET down sub-
stantially. If you can, position the MOSFET(s)
near the inlet of a power supplys fan, or the
outlet of a processors cooling fan.
3. The best test of a surface-mount MOSFET for
an application (assuming the above tips show it
to be a likely fit) is an empirical one. Check the
MOSFET's temperature in the actual layout of
the expected final circuit, at full operating
current. The use of a thermocouple on the drain
leads, or infrared pyrometer on the package, will
then give a reasonable idea of the devices
junction temperature.
MOSFET Transient Thermal Issues
Having chosen a MOSFET that will withstand the imposed
voltage stresses, and the worse case continuous I
2
R power
dissipation which it will see, it remains only to verify the
MOSFETs ability to handle short-term overload power dissi-
pation without overheating. A MOSFET can handle a much
C3
0.05µF
SENSE1VCC1
ON
CPOR
FB1
GATE1
GND
/POR
Undervoltage (Output) = 11.0V
/POR Delay = 25ms
START-UP Delay = 6ms
*Recommended for MOSFETs with gate-source
breakdown of 20V or less for catastrophic output
short circuit protection. (IRF7822 V
GS
(MAX) = 12V)
Channel 2 and additional pins omitted for clarity.
Q1
IRF7822
(SO-8)
R3
10
*D2
1N5240B
10V
R5
13.3k
1%
R1
33k
R2
33k
MIC2584
C1
1µF
C2
0.01µF
C
LOAD1
220µF
R4
100k
1%
V
OUT
12V@6A
V
IN
12V
11
97
16 15
12
6
14
R
SENSE1
0.006
5%
12
34
DOWNSTREAM
SIGNAL
D1
(18V)
Figure 12. Zener Clamped MOSFET Gate

MIC2584-KBTS

Mfr. #:
Manufacturer:
Description:
IC CTRLR HOT SWAP DUAL 16-TSSOP
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