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MBRS120T3G

P1-P3P4-P4
Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 7
1 Publication Order Number:
MBRS120T3/D
MBRS120T3G,
SBRS8120T3G
Preferred Device
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop (0.55 Volts Max @ 1.0 A, T
J
= 25C)
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guard−Ring for Stress Protection
ESD Ratings:
Human Body Model = 3B (> 16000 V)
Machine Model = C (> 400 V)
AEC−Q101 Qualified and PPAP Capable
SBRS8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 95 mg (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
Cathode Polarity Band
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
SMB
CASE 403A
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE, 20 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
B12 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
AYWW
B12G
G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MBRS120T3G SMB
(Pb−Free)
2,500 /
Tape & Reel
http://onsemi.com
(Note: Microdot may be in either location)
SBRS8120T3G SMB
(Pb−Free)
2,500 /
Tape & Reel
MBRS120T3G, SBRS8120T3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 V
Average Rectified Forward Current
(T
L
= 115C)
I
F(AV)
1.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
40
A
Operating Junction Temperature T
J
−65 to +125 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead
(T
L
= 25C)
R
JL
12
C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 1.0 A, T
J
= 25C)
V
F
0.6
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 25C)
(Rated dc Voltage, T
J
= 100C)
i
R
1.0
10
mA
1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS
)
1
0.5
0.2
0.1
0.05
0.03
0.02
10.1 0.2 0.3 0.4 0.5 0.6 0.7
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
I
R
, REVERSE CURRENT (mA)
100
10
1
0.1
0.01
0 4 8 121620 242832 3640
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current
T
J
= 125C
25C
20
2
0.2
0.02
30
3
0.3
0.03
50
5
0.5
0.05
0.7
0.07
0.3
0.8 0.9 1.1
T
C
= 100C
T
C
= 25C
100C
75C
MBRS120T3G, SBRS8120T3G
http://onsemi.com
3
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
8
7
6
5
4
3
2
1
0
50 60 70 80 90 100 110 120
T
C
, CASE TEMPERATURE (C)
SQUARE WAVE
DC
T
J
= 125C
P
F(AV)
, AVERAGE POWER DISSIPATION (WATTS)
5
4
3
2
1
0
012345
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
20
10
5
DC
I
PK
I
AV
=
SQUARE
WAVE
RATED VOLTAGE APPLIED
R
JC
= 12C/W
T
J
= 125C
C, CAPACITANCE (pF)
160
140
120
100
80
60
40
20
0
0 4 812162024 2832
V
R
, REVERSE VOLTAGE (VOLTS)
36 40
180
200
4030
9
10
CAPACITANCE
LOAD
NOTE: TYPICAL CAPACITANCE
AT 0 V = 160 pF
Figure 3. Typical Capacitance
Figure 4. Current Derating (Case)
Figure 5. Power Dissipation
130
P1-P3P4-P4

MBRS120T3G

Mfr. #:
Buy MBRS120T3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 1A 20V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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