Data Sheet BTS50055-1TMA
Infineon Technologies AG Page 1of 18 2010-April-27
Smart Highside High Current Power Switch Reversave
Features
Overload protection
Current limitation
Short circuit protection
Over temperature protection
Over voltage protection (including load dump)
Clamp of negative voltage at output
Fast deenergizing of inductive loads
1
)
Low ohmic inverse current operation
Reversave (Reverse battery protection)
Diagnostic feedback with load current sense
Open load detection via current sense
Loss of V
bb
protection
2
)
Electrostatic discharge (ESD) protection
Green product (RoHS compliant)
AEC qualified
Application
Power switch with current sense diagnostic
feedback for 12
V DC grounded loads
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS
chip on chip technology. Providing embedded protective functions.
IN
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
3
Overvoltage
protection
+ V
bb
PROFET
OUT
4 & Tab
1,2,6,7
Load GND
Load
Output
Voltage
detection
R
IS
IS
5
I
IS
I
L
V
IS
I
IN
Logic GND
Voltage
sensor
Voltage
source
Current
Sense
Logic
ESD
Temperature
sensor
R
bb
V
IN
1
) With additional external diode.
2
)
Additional external diode required for energized inductive loads (see page 9).
Product Summary
Overvoltage protection V
bb(AZ)
62 V
Output clamp
V
ON(CL)
42
V
Operating voltage
V
bb(on)
5.0 ... 34 V
On-state resistance R
ON
6.0
m
Load current (ISO) I
L(ISO)
70 A
Short circuit current limitation I
L(SC)
130 A
Current sense ratio I
L
:
I
IS
14 000
PG-TO220-7-4
1
7
SMD
Data Sheet BTS50055-1TMA
Infineon Technologies AG Page 2 2010-April-27
Pin Symbol Function
1 OUT O
Output; output to the load; pin
1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications.
3
)
2 OUT O Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications.
3)
3 IN I Input; has an internal pull up; activates the power switch in case of short to
ground
4 V
bb
+
Supply voltage; positive power supply voltage; tab and pin 4 are internally
shorted; in high current applications use the tab
4
)
.
5 IS S
Sense Output; Diagnostic feedback; provides a sense current proportional
to the load current; zero current on failure (see Truth Table on page 7)
6 OUT O
Output; output to the load; pin
1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications.
3)
7 OUT O
Output; output to the load; pin
1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications.
3)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (over voltage protection see page 4) V
bb
42 V
Supply voltage for short circuit protection,
T
j,start
=-40 ...+150°C: (see diagram on page 10)
V
bb
34 V
Load current (short circuit current, see page 5) I
L
self-limited A
Load dump protection V
LoadDump
= V
A
+ V
s
, V
A
= 13.5 V
R
I
5
)
= 2 , R
L
= 0.54 , t
d
= 200 ms,
IN,
IS = open or grounded
V
Load dump
6
)
75 V
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC), T
C
25 °C P
tot
170 W
Inductive load switch-off energy dissipation, single pulse
V
bb
= 12V, T
j,start
= 150°C, T
C
= 150°C const.,
I
L
= 20 A, Z
L
= 7.5 mH, 0 , see diagrams on page 10
E
AS
1.5 J
Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 k
V
ESD
4kV
Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagrams on page 8 and 9
I
IN
I
IS
+15 , -250
+15 , -250
mA
3
)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
4
)
Otherwise add up to 0.7 m (depending on used length of the pin) to the R
ON
if the pin is used instead of the
tab.
5
)
R
I
= internal resistance of the load dump test pulse generator.
6
)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Data Sheet BTS50055-1TMA
Infineon Technologies AG Page 3 2010-April-27
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance chip - case:
R
thJC
7
)
-- -- 0.75
K/W
junction - ambient (free air): R
thJA
--
60 --
SMD version, device on PCB
8
)
:
-- 33 40
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = -40 ... +150 °C, V
bb
= 12 V unless otherwise specified
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,2,6,7, see
measurement circuit page 7)
I
L
= 20 A, T
j
= 25 °C:
V
IN
= 0, I
L
= 20 A, T
j
= 150 °C:
R
ON
--
4.4
7.9
6.0
10.5
m
I
L
= 90 A, T
j
= 150 °C: -- 10.7
V
bb
= 6V
9
)
, I
L
= 20 A, T
j
= 150 °C: R
ON(Static)
-- 10 17
Nominal load current
10
)
(Tab to pins 1, 2, 6, 7)
ISO 10483-1/6.7: V
ON
= 0.5 V, T
c
= 85 °C
11
)
I
L(ISO)
55 70 -- A
Nominal load current
10)
, device on PCB
8)
T
A
= 85 °C, T
j
150 °C V
ON
0.5 V,
I
L(NOM)
13.6
17 -- A
Maximum load current in resistive range
(Tab to pins 1, 2, 6, 7) V
ON
= 1.8 V, T
c
= 25 °C:
see diagram on page 13 V
ON
= 1.8 V, T
c
= 150 °C:
I
L(Max)
250
150
--
--
--
--
A
Turn-on time
12
)
I
IN
to 90% V
OUT
:
Turn-off time I
IN
to 10% V
OUT
:
R
L
= 1 , T
j
=-40...+150°C
t
on
t
off
80
30
--
--
400
110
µs
Slew rate on
12)
(10 to 30% V
OUT
)
R
L
= 1 , T
J
= 25 °C
dV/dt
on
-- 0.7 -- V/µs
Slew rate off
12)
(70 to 40% V
OUT
)
R
L
= 1 , T
J
= 25 °C
-dV/dt
off
-- 1.1 -- V/µs
7
)
Thermal resistance R
thCH
case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
8
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
9
)
Decrease of V
bb
below 10 V causes slowly a dynamic increase of R
ON
to a higher value of R
ON(Static)
. As
long as V
bIN
> V
bIN(u) max
, R
ON
increase is less than 10 % per second for T
J
< 85 °C.
10
)
not subject to production test, specified by design
11
)
T
J
is about 105°C under these conditions.
12
)
See timing diagram on page 14.

BTS500551TMAATMA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
Power Switch ICs - Power Distribution Smart Hi-side Hi Currnt PWR Switch
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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