MMBT2907A RFG Datasheet MMBT2907A RFG | P1-P3

SOT-23

◇ Epitaxial planar die construction

◇ Surface device type mounting

◇ Moisture sensitivity level 1

◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate

◇ Pb free version and RoHS compliant

◇ Case : SOT- 23 small outline plastic package

◇ Weight : 0.008 grams (approximately)

◇ Marking Code : 2F

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings

Symbol Units

P

D

mW

V

CBO

V

CEO

V

EBO

V

I

C

mA

T

J

, T

STG

°C

Notes:1. Valid provided that electrodes are kept at ambient temperature

Version : B14

-60

-5

Value

350

Mechanical Data

-600

Junction and Storage Temperature Range

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-55 to + 150

350mW, PNP Small Signal Transistor

MMBT2907A

Features

Small Signal Product

◇ Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

◇ Terminal : Matte tin plated, lead free, solderable

Power Dissipation

per MIL-STD-202, Method 208 guaranteed

◇ High temperature soldering guaranteed : 260°C/10s

Paramete

r

Electrical Characteristics ( T

A

= 25

o

C unless otherwise noted )

Symbol Min Max Units

I

C

= -10μAI

E

= 0 V

(BR)CBO

-60 - V

I

C

= -10mA I

B

= 0 V

(BR)CEO

-60 - V

I

E

= -10μAI

C

= 0 V

(BR)EBO

-5 - V

V

CB

= -50V I

E

= 0 I

CBO

- -20 nA

V

CE

= -30V V

BE(OFF)

= -0.5V I

CEX

- -50 nA

Base Cut-off Current

V

CE

= -30V V

BE(OFF)

= -0.5V I

B

- -50 nA

V

CE

= -10V I

C

= -0.1mA

75 -

V

CE

= -10V I

C

= -1mA

100 -

V

CE

= -10V I

C

= -10mA

100 -

V

CE

= -10V I

C

= -150mA

100 300

V

CE

= -10V I

C

= -500mA

50 -

I

C

= -150mA I

B

= -15mA

--0.4

I

C

= -500mA I

B

= -50mA

-1.6

I

C

= -150mA I

B

= -15mA

--1.3

I

C

= -500mA I

B

= -50mA

-2.6

Transition Frequency

V

CE

= -20V I

C

= -50mA

f= 100MHz

f

T

200 - MHz

Output Capacitance

V

CB

=-10V I

E

=0

f= 100KHz

C

obo

-8.0pF

Intput Capacitance

V

EB

= -2V I

C

=0

f= 100KHz

C

ibo

-30pF

Delay Time

V

CE

= -30V I

C

= -150mA I

B1

= -15mA t

d

-10nS

Rise Time

V

CE

= -30V I

C

= -150mA I

B1

= -15mA t

r

-40nS

Storage Time

V

CE

= -6V I

C

= -150mA I

B1

= -I

B2

= -15mA t

s

- 225 nS

Fall Time

V

CE

= -6V I

C

= -150mA I

B1

= -I

B2

= -15mA t

f

-60nS

V

Small Signal Product

Version : B14

Emitter-Base Breakdown Voltage

Collector Cut-off Current

DC Current Gain

h

FE

Base-Emitter Saturation Voltage

V

BE(sat)

V

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector-Emitter Saturation Volta

g

V

CE(sat)

Version : B14

Small Signal Product

RATINGS AND CHARACTERISTIC CURVES

0

100

200

300

400

500

0.1 1.0 10.0 100.0 1000.0

h

FE

- Typical Pulsed Current Gain

I

C

- Collector Current (mA)

Fig. 1 Typical Pulsed Current Gain

VS. Collector Current

125 °C

V

CE

=5V

25 °C

- 40 °C

0.0

0.1

0.2

0.3

0.4

0.5

1 10 100 1000

V

CESAT

- Collector Emitter Voltage (V)

I

C

- Collector Current (mA)

β = 10

25 °C

125 °C

Fig. 2 Collector-Emitter Saturation Voltage

VS. Collector Current

- 40 °C

0

0.2

0.4

0.6

0.8

1

1.2

1 10 100 1000

V

BESAT

- Base Emitter Voltage (V)

I

C

- Collector Current (mA)

Fig. 3 Base-Emitter Saturation Voltage

VS. Collector Current

β = 10

25 °C

- 40 °C

125 °C

0

0.2

0.4

0.6

0.8

1

0.1 1 10 100

V

BE(ON)

- Base Emitter on Voltage (V)

I

C

- Collector Current (mA)

Fig. 4 Base Emitter On Voltage

VS. Collector Current

V

CE

= 5V

- 40 °C

25 °C

125 °C

0.01

0.1

1

10

100

25 50 75 100 125

I

CBO -

Collector Current (nA)

T

A

- Ambient Temperature (

O

C)

Fig. 5 Collector-Cutoff Current

VS. Ambient Temperature

V

CB

= 35V

0

4

8

12

16

20

0.1 1 10 100

Capacitance (pF)

Reverse Bias Voltage (V)

Fig. 6 Input and Output Capacitance

VS. Reverse Bias Voltage

C

ib

C

ob

MMBT2907A RFG

MMBT2907A RFG

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