MT41K1G16DGA-125:A

Table 6: Thermal Impedance
Die
Rev. Package Substrate
ΘJA (°C/W)
Airflow =
0m/s
ΘJA (°C/W)
Airflow =
1m/s
ΘJA (°C/W)
Airflow =
2m/s ΘJB (°C/W) ΘJC (°C/W) Notes
A 96-ball Low
conductivity
45.2 34.4 30.6 NA 3.0 1
High
conductivity
27.6 22.5 20.8 11 NA
Note:
1. Thermal resistance data is based on a number of samples from multiple lots and should
be viewed as a typical number.
16Gb: x16 TwinDie DDR3L SDRAM
Electrical Specifications
PDF: 09005aef85d16d13
DDR3L_16Gb_x16_2CS_TwinDie.pdf - Rev. B 03/15 EN
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
Electrical Specifications – I
CDD
Parameters
Table 7: DDR3L I
CDD
Specifications and Conditions (Die Revision A)
Combined
Symbol
Individual
Die Status
Bus
Width -125 -107 Units
I
CDD0
I
CDD0
=
I
DD0
+ I
DD2P0
+ 5
x16 83 85 mA
I
CDD1
I
CDD1
=
I
DD1
+ I
DD2P0
+ 5
x16 104 107 mA
I
CDD2P0
(slow exit) I
CDD2P0
=
I
DD2P0
+ I
DD2P0
x16 22 22 mA
I
CDD2P1
(fast exit) I
CDD2P1
=
I
DD2P1
+ I
DD2P0
x16 25 27 mA
I
CDD2Q
I
CDD2Q
=
I
DD2Q
+ I
DD2P0
x16 45 47 mA
I
CDD2N
I
CDD2N
=
I
DD2N
+ I
DD2P0
x16 47 49 mA
I
CDD2N T
I
CDD2NT
=
I
DD2NT
+ I
DD2P0
x16 51 53 mA
I
CDD3P
I
CDD3P
= I
DD3P
+ I
DD2P0
x16 47 49 mA
I
CDD3N
I
CDD3N
=
I
DD3N
+ I
DD2P0
x16 62 64 mA
I
CDD4R
I
CDD4R
=
I
DD4R
+ I
DD2P0
+ 5
x16 201 211 mA
I
CDD4W
I
CDD4W
=
I
DD4W
+ I
DD2P0
+ 5
x16 201 211 mA
I
CDD5B
I
CDD5B
=
I
DD5B
+ I
DD2P0
x16 256 261 mA
I
CDD6
(room temperature)
I
CDD6
=
I
DD6
+ I
DD6
x16 48 48 mA
I
CDD6ET
(extended temperature)
I
CDD6ET
=
I
DD6ET
+ I
DD6ET
x16 68 68 mA
I
CDD7
I
CDD7
=
I
DD7
+ I
DD2P0
+ 5
x16 236 246 mA
I
CDD8
I
CDD8
= 2 × I
DD2P0
+ 4 x16 26 26 mA
Note:
1. I
CDD
values reflect the combined current of both individual die. I
DDx
represents individu-
al die values.
16Gb: x16 TwinDie DDR3L SDRAM
Electrical Specifications – I
CDD
Parameters
PDF: 09005aef85d16d13
DDR3L_16Gb_x16_2CS_TwinDie.pdf - Rev. B 03/15 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
Package Dimensions
Figure 4: 96-Ball FBGA – Die Revision A (Package Code DGA)
Seating plane
0.1 A
Ball A1 ID
(covered by SR)
Ball A1 ID
A
0.29 MIN
1.1 ±0.1
6.4 CTR
9.5 ±0.1
0.8 TYP
12 CTR
14 ±0.1
96X Ø0.47
Dimensions apply
to solder balls post-
reflow on Ø0.42 SMD
ball pads.
0.8 TYP
123789
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
Notes:
1. All dimensions are in millimeters.
2. Solder ball material: SAC302 (96.8% Sn, 3% Ag, 0.2% Cu).
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000
www.micron.com/products/support Sales inquiries: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc. TwinDie is a trademark of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization some-
times occur.
16Gb: x16 TwinDie DDR3L SDRAM
Package Dimensions
PDF: 09005aef85d16d13
DDR3L_16Gb_x16_2CS_TwinDie.pdf - Rev. B 03/15 EN
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.

MT41K1G16DGA-125:A

Mfr. #:
Manufacturer:
Micron
Description:
IC DRAM 16G PARALLEL 800MHZ
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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