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MUR5010

P1-P2
V
RRM
= 50 V - 600 V
I
F
= 50 A
Features
• High Surge Capability DO-5 Package
• Types up to 600 V V
RRM
Parameter Symbol MUR5005 (R) MUR5010 (R) Unit
Re
p
etitive
p
eak reverse
V
50
100
V
Silicon Super Fast
Recover
y
Diode
MUR5005 thru MUR5020R
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions MUR5020 (R)
200
pp
voltage
V
RRM
50
100
V
RMS reverse voltage
V
RMS
35 70 V
DC blocking voltage
V
DC
50 100 V
Continuous forward current
I
F
50 50 A
Operating temperature
T
j
-65 to 175 -65 to 175 °C
Storage temperature
T
stg
-65 to 175 -65 to 175 °C
Parameter Symbol MUR5005 (R) MUR5010 (R) Unit
Diode forward voltage 1 1
10 10 μA
33 mA
Recovery Time
Maximum reverse recovery
time
T
RR
75 75 nS
MUR5020 (R)
-65 to 175
-65 to 175
1
10
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
Reverse current
I
R
V
F
A
50
600
V
R
= 50 V, T
j
= 25 °C
I
F
= 50 A, T
j
= 25 °C
T
C
≤ 125 °C
Conditions
600 600
T
C
= 25 °C, t
p
= 8.3 ms
200
140
200
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
V
R
= 50 V, T
j
= 125 °C
V
75
3
www.genesicsemi.com
1
MUR5005 thru MUR5020R
www.genesicsemi.com
2
P1-P2

MUR5010

Mfr. #:
Buy MUR5010
Manufacturer:
GeneSiC Semiconductor
Description:
Rectifiers 100V 50A Super Fast Recovery
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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