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DG2031DQ-T1-E3

P1-P3P4-P6P7-P7
NO2
COM2
IN2
1
2
3
10
9
Top View
V+
NO1
COM1
8
MSOP-10
NC2
GND
4
5
7
IN1
NC1
6
DG2031
Vishay Siliconix
Document Number: 71966
S-41158—Rev. E, 21-Jun-04
www.vishay.com
1
Low-Voltage, Sub 1-W, Dual SPDT Analog Switch
FEATURES
D Low Voltage Operation (1.8 V to 5.5 V)
D Low On-Resistance - r
ON:
0.45 W
D −71 dB OIRR @ 2.7 V, 100 kHz
D ESD Protection >2000 V
D MSOP-10 Package
D Available in Lead (Pb)-Free
BENEFITS
D Reduced Power Consumption
D High Accuracy
D Reduce Board Space
D 1.6-V Logic Compatible
D High Bandwidth
APPLICATIONS
D Cellular Phones
D Speaker Headset Switching
D Audio and Video Signal Routing
D PCMCIA Cards
D Battery Operated Systems
D Relay Replacement
DESCRIPTION
The DG2031 is a sub 1-W (0.75 W @ 2.7 V ) dual SPDT analog
switch designed for low voltage applications.
The DG2031 has on-resistance matching (less than 0.05 W @
2.7 V) and flatness (less than 0.2 W @ 2.7 V) that are
guaranteed over the entire voltage range. Additionally, low
logic thresholds makes the DG2031 an ideal interface to low
voltage DSP control signals.
The DG2031 has fast switching speed (on/off time @ 34 and
24 ns) with break-before-make guaranteed. In the On
condition, all switching elements conduct equally in both
directions. Off-isolation and crosstalk is −71 dB @ 100 kHz.
The DG2031 is built on Vishay Siliconix’s high-density low
voltage CMOS process. An eptiaxial layer is built in to prevent
latchup. The DG2031 contains the additional benefit of
2,000-V ESD protection.
Packaged in space saving MSOP-10, the DG2031 is a high
performance, low r
ON
switch for battery powered applications.
The DG2031 is available in both standard and lead (Pb)-free
packaging. No lead is used in the manufacturing process, for
the lead (Pb)-free version, either inside the device/package or
on external terminations.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
Logic NC1 and NC2 NO1 and NO2
0 ON OFF
1 OFF ON
ORDERING INFORMATION
Temp Range Package
Standard
Part Number
Lead (Pb)-Free
Part Number
-40 to 85°C
MSOP-10
(with Tape and Reel)
DG2031DQ-T1 DG2031DQ-T1—E3
DG2031
Vishay Siliconix
www.vishay.com
2
Document Number: 71966
S-41158—Rev. E, 21-Jun-04
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ -0.3 to +6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IN, COM, NC, NO
a
-0.3 to (V+ + 0.3 V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current (NO, NC, COM) "300 mA. . . . . . . . . . . . . . . . . . . . . . .
Peak Current "500 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix) -65 to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . .
ESD per Method 3015.7 >2 kV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Packages)
b
MSOP-10
c
320 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by inter-
nal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 4.0 mW/_C above 70_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Limits
−40 to 85_C
Parameter Symbol
V+ = 3 V, "10%, V
IN
= 0.4 or 2.0 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full 0 V+ V
On-Resistance r
ON
V+ 2 7 V V 0 6/1 5 V
Room
Full
0.50 0.75
0.8
r
ON
Flatness
d
r
ON
Flatness
V+ = 2.7 V, V
COM
= 0.6/1.5 V
I
NO
, I
NC
= 100 mA
Room 0.12 0.2
W
On-Resistance
Match Between Channels
d
Dr
DS(on)
Room 0.05
Switch Off Leakage Current
I
NO(off)
,
I
NC(off)
V+ = 3.3 V, V
NO
, V
NC
= 0.3 V/3 V
Room
Full
−1
−10
1
10
S
w
i
tc
h Off L
ea
k
age
C
urrent
I
COM(off)
V+ = 3
.
3 V
,
V
NO
,
V
NC
= 0
.
3 V/3 V
V
COM
= 3 V/0.3 V
Room
Full
−1
−10
1
10
nA
Channel-On Leakage Current I
COM(on)
V+ = 3.3 V, V
NO
, V
NC
= V
COM
= 0.3 V/3 V
Room
Full
−1
−10
1
10
Digital Control
Input High Voltage
d
V
INH
Full 1.6
V
Input Low Voltage V
INL
Full 0.4
V
Input Capacitance C
in
Full 9 pF
Input Current I
INL
or I
INH
V
IN
= 0 or V+ Full 1 1 mA
Dynamic Characteristics
Turn-On Time t
ON
V
NO
or V
NC
= 2 0 V R
L
= 50 W C
L
= 35 pF
Room
Full
34 58
59
Turn-Off Time t
OFF
V
NO
or
V
NC
=
2
.
0 V
,
R
L
=
5
0 W
,
C
L
=
3
5
p
F
Room
Full
24 49
50
ns
Break-Before-Make Time t
d
V
NO
or V
NC
= 2.0 V, R
L
= 50 W, C
L
= 35 pF Full 2 10
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 1.5 V, R
GEN
= 0 W Room 4 pC
Off-Isolation
d
OIRR
R
L
= 50 W C
L
= 5 pF f = 100 KHz
Room −71
dB
Crosstalk
d
X
TALK
R
L
=
5
0 W
,
C
L
=
5
p
F
,
f
=
100 KH
z
Room −71
dB
N
O
N
C
Off Capacitance
d
C
NO(off)
Room 117
N
O
,
N
C
Off C
apac
i
tance
d
C
NC(off)
V
IN
= 0 or V+ f = 1 MHz
Room 115
pF
Channel-On Capacitance
d
C
NO(on)
V
IN
=
0
or
V
+,
f
=
1 MH
z
Room 367
p
F
Ch
anne
l
-
O
n
C
apac
i
tance
d
C
NC(on)
Room 368
Power Supply
Power Supply Range V+ 1.8 5.5 V
Power Supply Current I+ V
IN
= 0 or V+ Full 0.01 1.0 mA
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
DG2031
Vishay Siliconix
Document Number: 71966
S-41158—Rev. E, 21-Jun-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10 10 K 100 K 10 M100 1 K 1 M
100 mA
10 mA
1 mA
100 mA
10 mA
1 mA
100 nA
10 nA
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
012345
0.0
0.2
0.4
0.6
0.8
1.0
1.2
012345
Supply Current vs. Input Switching Frequency
Input Switching Frequency (Hz)
I+ − Supply Current (A)
r
ON
vs. V
COM
and Supply Voltage
V
COM
− Analog Voltage (V)
T = 25_C
I
A
= 100 mA
− On-Resistance (
r
ON
W )
V+ = 3.0 V
V+ = 5.0 V
r
ON
vs. Analog Voltage and Temperature (NC1)
V
COM
− Analog Voltage (V)
− On-Resistance (
r
ON
W )
−600
−400
−200
0
200
400
600
012345
Leakage vs. Analog Voltage
V
COM
− Analog Voltage (V)
V+ = 2 V
85_C
25_C
−40_C
V+ = 5 V
NC
NO
V+ = 5 V
85_C
25_C
−40_C
NC
NO
V+ = 3 V
85_C
25_C
−40_C
−60 −40 −200 20406080100
10
10000
100000
Supply Current vs. Temperature
Temperature (_C)
V+ = 5 V
V
IN
= 0 V100
1000
I+ − Supply Current (nA)
V+ = 3 V
V
IN
= 0 V
−60 −40 −200 20406080100
10
10000
Leakage Current vs. Temperature
Temperature (_C)
V+ = 5 V
100
1000
Leakage Current (pA)
I
COM(off)
I
COM(on)
I
NO(off)
, I
NC(off)
Leakage Current (pA)
V+ = 5 V
I
COM(on)
I
COM(off)
I
NO(off)
, I
NC(off)
P1-P3P4-P6P7-P7

DG2031DQ-T1-E3

Mfr. #:
Buy DG2031DQ-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs RECOMMENDED ALT 78-DG2535EDQ-T1-GE3
Lifecycle:
New from this manufacturer.
Delivery:
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