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IXFX360N15T2

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK360N15T2
IXFX360N15T2
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
50
100
150
200
250
300
350
400
450
0 20 40 60 80 100 120 140 160 180 200 220
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
350
0.20.30.40.50.60.70.80.91.01.1
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 100 200 300 400 500 600 700 800
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 75V
I
D
= 180A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100 1,000
V
DS
- Volts
I
D
- Amperes
25µs
100µs
1ms
10ms
R
DS(on)
Limit
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
100ms
External Lead Limit
DC
© 2016 IXYS CORPORATION, All Rights Reserved
IXFK360N15T2
IXFX360N15T2
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
60
100
140
180
220
260
300
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 125ºC
R
G
= 1 , V
GS
= 10V
V
DS
= 75V
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
100
200
300
400
500
600
700
12345678910
R
G
- Ohms
t
r
- Nanoseconds
0
30
60
90
120
150
180
210
t
d(on)
- Nanoseconds
t
r
t
d(on)
T
J
= 125ºC, V
GS
= 10V
V
DS
= 75V
I
D
= 100A
I
D
= 200A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
0
100
200
300
400
500
600
700
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
80
100
120
140
160
180
200
220
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 1, V
GS
= 10V
V
DS
= 75V
I
D
= 100A
I
D
= 200A
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
100
140
180
220
260
300
340
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1 , V
GS
= 10V
V
DS
= 75V
I
D
= 200A
I
D
= 100A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
0
100
200
300
400
500
600
700
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
f
- Nanoseconds
100
120
140
160
180
200
220
240
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 1, V
GS
= 10V
V
DS
= 75V
T
J
= 25ºC
T
J
= 125ºC
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
100
200
300
400
500
600
700
800
900
12345678910
R
G
- Ohms
t
f
- Nanoseconds
100
200
300
400
500
600
700
800
900
t
d(off)
- Nanoseconds
t
f
t
d(off)
T
J
= 125ºC, V
GS
= 10V
V
DS
= 75V
I
D
= 200A, 100A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK360N15T2
IXFX360N15T2
IXYS REF:F_360N15T2(9V)8-19-09
Fig. 19. Maximum Transient Thermal Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 19. Maximium Transient Thermal Impedance
.sadgsfgsf
0.200
P1-P3P4-P6

IXFX360N15T2

Mfr. #:
Buy IXFX360N15T2
Manufacturer:
Littelfuse
Description:
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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