BYG23T-M3
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-15
1
Document Number: 89429
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Ultrafast Avalanche SMD Rectifiers
TYPICAL APPLICATIONS
For use in high voltage, high frequency rectification specially
suited for freewheeling, clamping, snubbering in power
supply, ignition drive of HID, UHP and industrial ballast and
snubber for PDP TV power supply application.
FEATURES
• Glass passivated pellet chip junction
• Low profile package
• Ideal for automated placement
• Low reverse current
• High reverse voltage
• Ultra fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Note
• Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
1300 V
I
FSM
18 A
t
rr
75 ns
E
R
5 mJ
V
F
at I
F
= 1.0 A (T
A
= 125 °C) 1.39 V
T
J
max. 150 °C
Package DO-214AC (SMA)
Diode variations Single die
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG23T UNIT
Device marking code BYG23T
Maximum repetitive peak reverse voltage V
RRM
1300 V
Maximum DC forward current (fig.1) I
F
(1)
1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
18 A
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I
(BR)R
= 0.4 A, T
L
= 25 °C
E
R
5mJ
Maximum operating junction temperature T
J
150 °C
Storage temperature range T
STG
-55 to +150 °C