VS-UFB80FA40
www.vishay.com
Vishay Semiconductors
Revision: 31-May-16
1
Document Number: 93620
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Insulated Ultrafast Rectifier Module, 80 A
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (T
J
max. = 175 °C)
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
The VS-UFB80FA40 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
PRODUCT SUMMARY
V
R
400 V
I
F(AV)
per module at T
C
= 121 °C 80 A
t
rr
32 ns
Type Modules - Diode FRED Pt
®
Package SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
R
400 V
Continuous forward current per diode I
F
T
C
= 130 °C 40
A
Single pulse forward current per diode I
FSM
T
C
= 25 °C 270
Maximum power dissipation per module P
D
T
C
= 130 °C 90 W
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500 V
Operating junction and storage temperatures T
J
, T
Stg
-55 to +175 °C
ELECTRICAL SPECIFICATIONS PER DIODE (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
BR
I
R
= 100 μA 400 - -
V
Forward voltage V
FM
I
F
= 30 A - 1.14 1.39
I
F
= 30 A, T
J
= 175 °C - 0.91 1.04
Reverse leakage current I
RM
V
R
= V
R
rated - - 50 μA
T
J
= 175 °C, V
R
= V
R
rated - - 1 mA
Junction capacitance C
T
V
R
= 200 V - 68 - pF