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MS2212
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol Parameter Value Unit
V
CC
Collector-Supply Voltage* 32 V
I
C
Device Current* 1.8 A
P
DISS
Power Dissipation* 50 W
T
J
Junction Temperature +250
°°C
T
STG
Storage Temperature - 65 to + 200
°°C
Thermal DataThermal Data
R
TH(j-c)
Junction-Case Thermal Resistance* 3.0
°°C/W
* Applies only to rated RF operation.
Features
• 960-1215 MHz
• GOLD METALLIZATION
• EMITTER SITE BALLASTED
• Pout = 15W
• Gp = 8.1 dB MINIMUM
• INTERNAL IMPEDANCE MATCHING
• INFINITE VSWR CAPABILITY @ RATED CONDITIONS
• COMMON BASE CONFIGURATION
DDESCRIPTION:ESCRIPTION:
The MS2212 is designed for specialized avionics applications, such
as JTIDS, where maximum performance is required under a variety of
pulse formats. Internal impedance matching provides superior broad
band performance.
The MS2212 utilizes gold metallization and emitter ballasting to
provide superior reliability and consistent performance under the
most rugged pulse conditions.
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
