2N5460 Datasheet 2N5460, 2N5462G, 2N5460G | P1-P3

March, 2006 − Rev. 5

1 Publication Order Number:

2N5460/D

2N5460, 2N5461, 2N5462

JFET Amplifier

P−Channel − Depletion

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain − Gate Voltage V

DG

40 Vdc

Reverse Gate − Source Voltage V

GSR

40 Vdc

Forward Gate Current I

G(f)

10 mAdc

Total Device Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

350

2.8

mW

mW/°C

Junction Temperature Range T

J

−65 to +135 °C

Storage Channel Temperature Range T

stg

−65 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

MARKING DIAGRAM

TO−92

CASE 29

STYLE 7

1

2

3

Preferred devices are recommended choices for future use

and best overall value.

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

2 DRAIN

1 SOURCE

3

GATE

2N

546x

AYWWG

G

2N546x = Device Code

x = 0, 1, or 2

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

2N5460, 2N5461, 2N5462

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Gate−Source Breakdown Voltage

(I

G

= 10 mAdc, V

DS

= 0) 2N5460, 2N5461, 2N5462

V

(BR)GSS

40 − − Vdc

Gate Reverse Current

(V

GS

= 20 Vdc, V

DS

= 0) 2N5460, 2N5461, 2N5462

(V

GS

= 30 Vdc, V

DS

= 0)

(V

GS

= 20 Vdc, V

DS

= 0, T

A

= 100°C) 2N5460, 2N5461, 2N5462

(V

GS

= 30 Vdc, V

DS

= 0, T

A

= 100°C)

I

GSS

−

5.0

1.0

nAdc

mAdc

Gate−Source Cutoff Voltage 2N5460

(V

DS

= 15 Vdc, I

D

= 1.0 mAdc) 2N5461

2N5462

V

GS(off)

0.75

1.0

1.8

−

6.0

7.5

9.0

Vdc

Gate−Source Voltage

(V

DS

= 15 Vdc, I

D

= 0.1 mAdc) 2N5460

(V

DS

= 15 Vdc, I

D

= 0.2 mAdc) 2N5461

(V

DS

= 15 Vdc, I

D

= 0.4 mAdc) 2N5462

V

GS

0.5

0.8

1.5

−

4.0

4.5

6.0

Vdc

ON CHARACTERISTICS

Zero−Gate−Voltage Drain Current 2N5460

(V

DS

= 15 Vdc, V

GS

= 0, f = 1.0 kHz) 2N5461

2N5462

I

DSS

−1.0

−2.0

−4.0

−

−5.0

−9.0

−16

mAdc

SMALL−SIGNAL CHARACTERISTICS

Forward Transfer Admittance 2N5460

(V

DS

= 15 Vdc, V

GS

= 0, f = 1.0 kHz) 2N5461

2N5462

⎪y

fs

⎪ 1000

1500

2000

−

4000

5000

6000

mmhos

Output Admittance (V

DS

= 15 Vdc, V

GS

= 0, f = 1.0 kHz) ⎪y

os

⎪ − − 75

mmhos

Input Capacitance (V

DS

= 15 Vdc, V

GS

= 0, f = 1.0 MHz) C

iss

− 5.0 7.0 pF

Reverse Transfer Capacitance (V

DS

= 15 Vdc, V

GS

= 0, f = 1.0 MHz) C

rss

− 1.0 2.0 pF

FUNCTIONAL CHARACTERISTICS

Equivalent Short−Circuit Input Noise Voltage

(V

DS

= 15 Vdc, V

GS

= 0, f = 100 Hz, BW = 1.0 Hz)

e

n

− 60 115

nVń Hz

Ǹ

ORDERING INFORMATION

Device Package Shipping

†

2N5460 TO−92

1000 Units / Box

2N5460G TO−92

(Pb−Free)

2N5461 TO−92

2N5461G TO−92

(Pb−Free)

2N5461RLRA TO−92

2000 / Tape & Reel

2N5461RLRAG TO−92

(Pb−Free)

2N5462 TO−92

1000 Units / Box

2N5462G TO−92

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

2N5460, 2N5461, 2N5462

http://onsemi.com

3

Y

fs

FORWARD TRANSFER ADMITTANCE ( mhos)m Y

fs

FORWARD TRANSFER ADMITTANCE ( mhos)m

DRAIN CURRENT versus GATE

SOURCE VOLTAGE

FORWARD TRANSFER ADMITTANCE

versus DRAIN CURRENT

I

D

, DRAIN CURRENT (mA)

Y

fs

FORWARD TRANSFER ADMITTANCE (

mhos)m

4.0 4000

0 0.2

V

GS

, GATE−SOURCE VOLTAGE (VOLTS)

Figure 1. V

GS(off)

= 2.0 V

1.0

I

D

, DRAIN CURRENT (mA)

3.5

I

D

, DRAIN CURRENT (mA)

10 10000

0 1.0

V

GS

, GATE−SOURCE VOLTAGE (VOLTS)

Figure 2. V

GS(off)

= 4.0 V

I

D

, DRAIN CURRENT (mA)

I

D

, DRAIN CURRENT (mA)

16 10000

0

V

GS

, GATE−SOURCE VOLTAGE (VOLTS)

Figure 3. V

GS(off)

= 5.0 V

I

D

, DRAIN CURRENT (mA)

Figure 4. V

GS(off)

= 2.0 V

Figure 5. V

GS(off)

= 4.0 V

Figure 6. V

GS(off)

= 5.0 V

3.0

2.5

2.0

1.5

1.0

0.5

0

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

V

DS

= 15 V

200

300

500

700

1000

2000

3000

0.2 0.3 0.5 0.7 2.0 3.0 4.0

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

0

0.5 1.5 2.0 2.5 3.0 3.5 4.0

500

700

1000

2000

3000

5000

7000

0.5 0.7 1.0 2.0 3.0 5.0 7.0

14

12

10

8.0

6.0

4.0

2.0

0

1.0 2.0 3.0 8.04.0 5.0 6.0 7.0

500

700

1000

2000

3000

5000

7000

0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

T

A

= −55°C

25°C

125°C

V

DS

= 15 V

f = 1.0 kHz

V

DS

= 15 V

T

A

= −55°C

25°C

125°C

V

DS

= 15 V

T

A

= −55°C

25°C

125°C

V

DS

= 15 V

f = 1.0 kHz

V

DS

= 15 V

f = 1.0 kHz

2N5460

2N5460

Products related to this Datasheet