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TISP4180H4BJR

P1-P3P4-P6P7-P9P10-P11
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
TISP4165H4BJ THRU TISP4200H4BJ,
TISP4265H4BJ THRU TISP4350H4BJ
HIGH HOLDING CURRENT
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
T
R
SD4XAA
Terminals T and R correspond to the
alternative line designators of A and B
Device Symbol
Device
V
DRM
V
V
(BO)
V
‘4165 135 165
‘4180 145 180
‘4200 155 200
‘4265 200 265
‘4300 230 300
‘4350 275 350
Waveshape Standard
I
TSP
A
2/10 µs GR-1089-CORE 500
8/20 µs IEC 61000-4-5 300
10/160 µs FCC Part 68 250
10/700 µs ITU-T K.20/21 200
10/560 µs FCC Part 68 160
10/1000 µs GR-1089-CORE 100
Rated for International Surge Wave Shapes
12
T(A)R(B)
MDXXBG
How To Order
SMBJ Package (Top View)
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g., between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g., 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as
the diverted current subsides.
ITU-T K.20/21 Rating ........................ 8 kV 10/700, 200 A 5/310
High Holding Current........................................... 225 mA min.
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Low Differential Capacitance .................................. 67 pF max.
.............................................. UL Recognized Component
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Device Package Carrier
TISP4xxxH4BJ BJ (J-Bend DO-214AA/SMB)
Embossed Tape Reeled
Bulk Pack
TISP4xxxH4BJR-S
TISP4xxxH4BJ-S
Insert xxx value corresponding to protection voltages of 165 through to 350.
Order As
*R
oH
S
C
O
M
P
L
IA
N
T
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
Rating Symbol Value Unit
Repetitive peak off-state voltage, (see Note 1)
‘4165
‘4180
‘4200
‘4265
‘4300
‘4350
V
DRM
±135
±145
±155
±200
±230
±275
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
I
TSP
A
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 500
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator) 300
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 250
5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 220
0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) 200
5/310 µs (ITU-T K.20/21, 10/700 µs voltage wave shape) 200
5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 200
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 160
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 100
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
I
TSM
55
60
2.1
A
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A di
T
/dt 400 A/µs
Junction temperature T
J
-40 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
2. Initially, the TISP4xxxH4BJ must be in thermal equilibrium with T
J
=25°C.
3. The surge may be repeated after the TISP4xxxH4BJ returns to its initial conditions.
4. See Applications Information and Figure 11 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient
temperatures above 25 °C.
Absolute Maximum Ratings, T
A
= 25 °C (Unless Otherwise Noted)
Description
This TISP4xxxH4BJ range consists of six voltage variants to meet various maximum system voltage levels (135 V to 275 V). They are guaran-
teed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are in a
plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and holding
current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is available.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
Thermal Characteristics
Electrical Characteristics, T
A
= 25 °C (Unless Otherwise Noted)
Parameter Test Conditions Min. Typ. Max. Unit
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
T
A
= 25 °C
T
A
= 85 °C
±5
±10
µA
V
(BO)
Breakover voltage dv/dt = ±750 V/ms, R
SOURCE
= 300
Ω
‘4165
‘4180
‘4200
‘4265
‘4300
‘4350
±165
±180
±200
±265
±300
±350
V
V
(BO)
Impulse breakover
voltage
dv/dt
≤
±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
‘4165
‘4180
‘4200
‘4265
‘4300
‘4350
±174
±189
±210
±276
±311
±363
V
I
(BO)
Breakover current dv/dt = ±750 V/ms, R
SOURCE
= 300
Ω
±0.15 ±0.8 A
V
T
On-state voltage I
T
= ±5A, t
W
= 100 µs ±3V
I
H
Holding current I
T
= ±5 A, di/dt = -/+30 mA/ms ±0.225 ±0.8 A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
±5kV/µs
I
D
Off-state current V
D
= ±50 V T
A
= 85 °C ±10 µA
C
off
Off-state capacitance
f = 100 kHz, V
d
=1V rms, V
D
=0,
f = 100 kHz, V
d
=1V rms, V
D
=-1V
f = 100 kHz, V
d
=1V rms, V
D
=-2V
f = 100 kHz, V
d
=1V rms, V
D
=-50V
f = 100 kHz, V
d
=1V rms, V
D
= -100 V
(see Note 6)
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
80
70
71
60
65
55
30
24
28
22
90
84
79
67
74
62
35
28
33
26
pF
NOTE 6: To avoid possible voltage clipping, the ‘4125 is tested with V
D
=-98V.
Parameter Test Conditions Min. Typ. Max. Unit
R
θ
JA
Junction to free air thermal resistance
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25 °C, (see Note 7)
113
C/W
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
, T
A
= 25 °
°
C
50
NOTE 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
P1-P3P4-P6P7-P9P10-P11

TISP4180H4BJR

Mfr. #:
Buy TISP4180H4BJR
Manufacturer:
Bourns
Description:
THYRISTOR 145V 300A DO214AA
Lifecycle:
New from this manufacturer.
Delivery:
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