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MMBTA05LT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 10
1 Publication Order Number:
MMBTA05LT1/D
MMBTA05L, MMBTA06L
Driver Transistors
NPN Silicon
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MMBTA05L
MMBTA06L
V
CEO
60
80
Vdc
Collector−Base Voltage
MMBTA05L
MMBTA06L
V
CBO
60
80
Vdc
Emitter−Base Voltage V
EBO
4.0 Vdc
Collector Current − Continuous I
C
500 mAdc
Electrostatic Discharge ESD HBM Class 3B
MM Class C
CDM Class IV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5
Board (Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
SOT−23
CASE 318
STYLE 6
2
3
1
MARKING DIAGRAMS
1H M G
G
MMBTA05LT1
COLLECTOR
3
1
BASE
2
EMITTER
1GM M G
G
MMBTA06LT1,
SMMBTA06L
1H, 1GM = Specific Device Code
M = Date Code*
G = Pb−Free Package
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
www.onsemi.com
MMBTA05L, MMBTA06L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(I
C
= 1.0 mAdc, I
B
= 0) MMBTA05L
MMBTA06L
V
(BR)CEO
60
80
−
−
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 100 mAdc, I
C
= 0)
V
(BR)EBO
4.0 − Vdc
Collector Cutoff Current
(V
CE
= 60 Vdc, I
B
= 0)
I
CES
− 0.1
mAdc
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0) MMBTA05L
(V
CB
= 80 Vdc, I
E
= 0) MMBTA06L
I
CBO
−
−
0.1
0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
h
FE
100
100
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 10 mAdc)
V
CE(sat)
− 0.25 Vdc
Base−Emitter On Voltage
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
V
BE(on)
− 1.2 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(I
C
= 10 mA, V
CE
= 2.0 V, f = 100 MHz)
f
T
100 − MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
Figure 1. Switching Time Test Circuits
OUTPUT
TURN-ON TIME
-1.0 V
V
CC
+40 V
R
L
* C
S
t 6.0 pF
R
B
100
100
V
in
5.0 mF
t
r
= 3.0 ns
0
+10 V
5.0 ms
OUTPUT
TURN-OFF TIME
+V
BB
V
CC
+40 V
R
L
* C
S
t 6.0 pF
R
B
100
100
V
in
5.0 mF
t
r
= 3.0 ns
5.0 ms
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
MMBTA05L, MMBTA06L
www.onsemi.com
3
Figure 2. Current Gain Bandwidth Product vs.
Collector Current
Figure 3. Capacitance
Figure 4. Switching Time
I
C
, COLLECTOR CURRENT (mA) V
R
, REVERSE VOLTAGE (V)
V
CE
= 2.0 V
T
A
= 25°C
T
A
= 25°C
C
ibo
C
obo
2010
I
C
, COLLECTOR CURRENT (mA)
200
100
50
20
10
100
t, TIME (ns)
50
200 500
1.0 k
500
V
CC
= 40 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t
s
t
f
t
r
5.0 7.0
30
70
300
700
30 70
t
d
@ V
BE(off)
= 0.5 V
C, CAPACITANCE (pF)
300
Figure 5. DC Current Gain vs. Collector
Current
I
C
, COLLECTOR CURRENT (mA)
T
A
= 150°C
V
CE
= 1.0 V
f
tau
, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
1000
100
10
1 10 100 1000
0.1 1 10 100
100
10
1
T
A
= 25°C
T
A
= −55°C
h
fe
, DC CURRENT GAIN
0.1 1 10 100
1000
1000
100
10
Figure 6. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 7. Base Emitter Saturation Voltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (mA)
0.01
0.1
1
10.1
0.2
0.3
0.4
0.6
0.7
0.8
1.0
1.1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
0.5
0.9
I
C
/I
B
= 10
T
A
= 150°C
T
A
= 25°C
T
A
= −55°C
1.2
10 100 1000
T
A
= 150°C
T
A
= 25°C
T
A
= −55°C
10.1 10 100 1000
P1-P3P4-P6

MMBTA05LT1G

Mfr. #:
Buy MMBTA05LT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 500mA 60V NPN
Lifecycle:
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