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PEMD24,115

P1-P3P4-P6P7-P9P10-P11
9397 750 14457 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 2 May 2005 3 of 10
Philips Semiconductors
PEMD24; PUMD24
NPN/PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor; for the PNP transistor with negative polarity
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 50 V
V
EBO
emitter-base voltage open collector - 10 V
V
I
input voltage TR1
positive - +40 V
negative - −10 V
input voltage TR2
positive - +10 V
negative - −40 V
I
O
output current (DC) - 20 mA
I
CM
peak collector current - 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
SOT363
[1]
- 200 mW
SOT666
[1] [2]
- 200 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
SOT363
[1]
- 300 mW
SOT666
[1] [2]
- 300 mW
9397 750 14457 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 2 May 2005 4 of 10
Philips Semiconductors
PEMD24; PUMD24
NPN/PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 7: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance from
junction to ambient
in free air
SOT363
[1]
- - 625 K/W
SOT666
[1] [2]
- - 625 K/W
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
SOT363
[1]
- - 416 K/W
SOT666
[1] [2]
- - 416 K/W
Table 8: Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
I
CBO
collector-base cut-off
current
V
CB
=50V; I
E
= 0 A - - 100 nA
I
CEO
collector-emitter
cut-off current
V
CE
=30V; I
B
=0A - - 1 µA
V
CE
=30V; I
B
=0A;
T
j
= 150 °C
--50µA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
=0A - - 50 µA
h
FE
DC current gain V
CE
=5V; I
C
=5mA 80 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 5 mA; I
B
= 0.25 mA - - 150 mV
V
I(off)
off-state input voltage V
CE
=5V; I
C
= 100 µA - 1.1 0.5 V
V
I(on)
on-state input voltage V
CE
= 0.3 V; I
C
= 1 mA 3 1.5 - V
R1 bias resistor 1 (input) 70 100 130 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
C
c
collector capacitance V
CB
=10V;I
E
=i
e
=0A;
f = 1 MHz
TR1 (NPN) - - 2.5 pF
TR2 (PNP) - - 3 pF
9397 750 14457 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 2 May 2005 5 of 10
Philips Semiconductors
PEMD24; PUMD24
NPN/PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
V
CE
=5V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
Fig 1. TR1 (NPN): DC current gain as a function of
collector current; typical values
Fig 2. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
V
CE
= 0.3 V
(1) T
amb
= −40 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
V
CE
=5V
(1) T
amb
= −40 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 3. TR1 (NPN): On-state input voltage as a function
of collector current; typical values
Fig 4. TR1 (NPN): Off-state input voltage as a function
of collector current; typical values
006aaa168
I
C
(mA)
10
−1
10
2
101
10
2
10
3
h
FE
10
(1)
(3)
(2)
006aaa169
I
C
(mA)
10
−1
101
10
2
V
CEsat
(mV)
10
(1)
(2)
(3)
I
C
(mA)
10
−1
101
006aaa170
1
10
V
I(on)
(V)
10
−1
(1)
(2)
(3)
006aaa171
I
C
(mA)
10
−2
10110
−1
1
10
V
I(off)
(V)
10
−1
(1)
(3)
(2)
P1-P3P4-P6P7-P9P10-P11

PEMD24,115

Mfr. #:
Buy PEMD24,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - Pre-Biased TRNS DOUBL RET TAPE7
Lifecycle:
New from this manufacturer.
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