Jan2N2605 Datasheet Jantx2N2605, 2N2605, Jantxv2N2605 | P1-P3

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http: //www.microsemi.com

PNP SILICON LOW POWER TRANSISTOR

Qualified per MIL-PRF-19500/354

T4-LDS-0092 Rev. 2 (101320) Page 1 of 4

DEVICES LEVELS

2N2604 2N2604UB

JAN

2N2605 2N2605UB

JANTX

JANTXV

ABSOLUTE MAXIMUM RATINGS (T

C

= +25°C unless otherwise noted)

Parameters / Test Conditions Symbol 2N2604 2N2605 Unit

Collector-Base Voltage V

CBO

80 70 Vdc

Collector-Emitter Voltage V

CEO

60 Vdc

Emitter-Base Voltage V

EBO

6.0 Vdc

Collector Current I

C

30 mAdc

Total Power Dissipation @ T

A

= +25°C

(1)

P

T

400 mW/°C

Operating & Storage Junction Temperature Range T

J

, T

stg

-65 to +200 °C

THERMAL CHARACTERISTICS

Parameters / Test Conditions Symbol Max. Unit

Thermal Resistance, Junction-to-Ambient

R

θJA

437

°C/mW

UB 275

Note:

1/ Consult 19500/354 for thermal curves

ELECTRICAL CHARACTERISTICS (T

A

= +25°C, unless otherwise noted)

Parameters / Test Conditions Symbol Min. Max. Unit

OFF CHARACTERTICS

Collector-Base Cutoff Current

I

CBO

V

CB

= 80V dc

V

CB

= 70V dc

V

CB

= 50V dc

V

CB

= 50V dc, T

A

= +150°C

2N2604, UB

2N2605, UB

2N2604, 2N2605, UB

10.0

5.0

uAdc

nAdc

uAdc

Collector-Emitter Breakdown Current

I

C

= 10mAdc

V

(BR)CEO

60 Vdc

Emitter-Base Cutoff Current

V

EB

= 6.0Vdc

V

EB

= 5.0Vdc

I

EBO

10.0

2.0

uAdc

ηAdc

Collector-Emitter Cutoff Current

V

CE

= 50Vdc

I

CES

10

ηAdc

TO-46 (TO-206AB)

UB Package

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http: //www.microsemi.com

T4-LDS-0092 Rev. 2 (101320) Page 2 of 4

ELECTRICAL CHARACTERISTICS (T

A

= +25°C, unless otherwise noted) (CONT.)

Parameters / Test Conditions Symbol Min. Max. Unit

ON CHARACTERTICS

(2)

Forward-Current Transfer Ratio

h

FE

I

C

= 10

μ

Adc, V

CE

= 5.0Vdc

2N2604, UB

2N2605, UB

40

100

120

300

I

C

= 500

μ

Adc, V

CE

= 5.0Vdc

2N2604, UB

2N2605, UB

60

150

180

450

I

C

= 10mAdc, V

CE

= 5.0Vdc 2N2604, UB

2N2605, UB

40

100

160

400

I

C

= 10mAdc, V

CE

= 5.0Vdc, T

A

= -55°C 2N2604, UB

2N2605, UB

15

30

Collector-Emitter Saturation Voltage

V

CE(sat)

Vdc

I

C

= 10mAdc, I

B

= 500

μ

Adc

0.3

Base-Emitter Saturation Voltage

V

BE(sat)

Vdc

I

C

= 10mA, I

B

= 500

μ

Adc

0.7 0.9

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions Symbol Min. Max. Unit

Small-Signal Short-Circuit Input Impedance

h

ie

kΩ

I

C

= 1.0mAdc, V

CB

= 5.0Vdc, f = 1.0kHz 2N2604, UB

2N2605, UB

1.0

2.0

10

20

Small-Signal Open-Circuit Forward Current Output Admittance

h

oe

μmhos

I

C

= 1.0mAdc, V

CE

= 5.0Vdc, f = 1.0kHz 2N2604, UB

2N2605, UB

40

60

Small-Signal Short-Circuit Forward Current Transfer Ratio

h

fe

I

C

= 1.0mAdc, V

CE

= 5.0Vdc, f = 1.0kHz 2N2604, UB

2N2605, UB

60

150

180

450

Magnitude of Small-Signal Forward Current Transfer Ratio

|h

fe

|

I

C

= 0.5mAdc, V

CE

= 5.0Vdc, f = 30MHz 1.0 8.0

Output Capacitance

C

obo

pF

V

CB

= 5.0Vdc, I

E

= 0, 100 kHz ≤ f ≤ 1.0MHz

6.0

Noise Figure

dB

V

CE

= 5.0Vdc, I

C

= 10

μ

Adc, R

g

= 10kΩ, f = 100Hz

V

CE

= 5.0Vdc, I

C

= 10μAdc, R

g

= 10kΩ, f = 1.0kHz

V

CE

= 5.0Vdc, I

C

= 10μAdc, R

g

= 10kΩ, f = 10kHz

F

1

F

2

F

3

5.0

3.0

(2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http: //www.microsemi.com

T4-LDS-0092 Rev. 2 (101320) Page 3 of 4

PACKAGE DIMENSIONS

NOTES:

1. Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and lead 3 is collector.

2. Millimeters are given for general information only.

3. Symbol TL is measured from HD maximum.

4. Details of outline in this zone are optional.

5. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18

mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be

measured by direct methods or by the gauge and gauging procedure.

6. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum.

7. Lead number three is electrically connected to case.

8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).

9. Symbol r applied to both inside corners of tab.

10. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 1. Physical dimensions - (TO-46).

Symbol

Dimensions

Inches Millimeters Note

Min Max Min Max

CD .178 .195 4.52 4.95

CH .065 .085 1.65 2.16

HD .209 .230 5.31 5.84

LC .100 TP 2.54 TP 5

LD .016 .021 0.41 0.53 6

LL .500 1.750 12.70 44.45 6

LU .016 .019 0.41 0.48 6

L

1

.050 1.27 6

L

2

.250 6.35 6

Q .040 1.02 4

TL .028 .048 0.71 1.22 3, 8

TW .036 .046 0.91 1.17 3, 8

r .010 0.25 9

α 45° TP 45° TP 5

Jan2N2605

Jan2N2605

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