VS-VSKV56/04

VS-VSKU41.., VS-VSKV41.., VS-VSKU56.., VS-VSKV56.. Series
www.vishay.com
Vishay Semiconductors
Revision: 24-Mar-14
1
Document Number: 94653
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ADD-A-PAK Generation VII Power Modules
Thyristor/Thyristor, 45 A/60 A
MECHANICAL DESCRIPTION
The ADD-A-PAK generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
FEATURES
High voltage
Industrial standard package
Low thermal resistance
UL approved file E78996
Designed and qualified for industrial level
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
Up to 1600 V
High surge capability
Easy mounting on heatsink
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
PRODUCT SUMMARY
I
T(AV)
45 A/60 A
Type Modules - Thyristor, Standard
ADD-A-PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VS-VSK.41 VS-VSK.56 UNITS
I
T(AV)
85 °C 45 60
A
I
T(RMS)
70 95
I
TSM
50 Hz 850 1200
60 Hz 890 1256
I
2
t
50 Hz 3.61 7.20
kA
2
s
60 Hz 3.30 6.57
I
2
t 36.1 72 kA
2
s
V
RRM
Range 400 to 1600 400 to 1600 V
T
Stg
-40 to 125 °C
T
J
-40 to 125 °C
VS-VSKU41.., VS-VSKV41.., VS-VSKU56.., VS-VSKV56.. Series
www.vishay.com
Vishay Semiconductors
Revision: 24-Mar-14
2
Document Number: 94653
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS
Notes
(1)
I
2
t for time t
x
= I
2
t x t
x
(2)
Average power = V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
)
2
(3)
16.7 % x x I
AV
< I < x I
AV
(4)
I > x I
AV
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
V
DRM
, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
I
RRM,
I
DRM
AT 125 °C
mA
VS-VSK.41
VS-VSK.56
04 400 500 400
15
08 800 900 800
12 1200 1300 1200
16 1600 1700 1600
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VS-VSK.41 VS-VSK.56 UNITS
Maximum average on-state
current
I
T(AV)
180° conduction, half sine wave,
T
C
= 85 °C
45 60
A
Maximum continuous RMS
on-state current
I
T(RMS)
DC 70 95
T
C
82 81 °C
Maximum peak, one-cycle
non-repetitive on-state current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal
half wave,
initial T
J
= T
J
maximum
850 1200
A
t = 8.3 ms 890 1256
t = 10 ms
100 % V
RRM
reapplied
715 1000
t = 8.3 ms 750 1056
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
Initial T
J
= T
J
maximum
3.61 7.20
kA
2
s
t = 8.3 ms 3.30 6.57
t = 10 ms
100 % V
RRM
reapplied
2.56 5.10
t = 8.3 ms 2.33 4.56
Maximum I
2
t for fusing I
2
t
(1)
t = 0.1 ms to 10 ms, no voltage reapplied
T
J
= T
J
maximum
36.1 72 kA
2
s
Maximum value of threshold
voltage
V
T(TO)
(2)
Low level
(3)
T
J
= T
J
maximum
1.08 0.91
V
High level
(4)
1.12 1.02
Maximum value of on-state
slope resistance
r
t
(2)
Low level
(3)
T
J
= T
J
maximum
4.7 4.27
m
High level
(4)
4.5 3.77
Maximum on-state voltage drop V
TM
I
TM
= x I
T(AV)
T
J
= 25 °C 1.81 1.7 V
Maximum non-repetitive rate of
rise of turned on current
dI/dt
T
J
= 25 °C, from 0.67 V
DRM
,
I
TM
= x I
T(AV)
, I
g
= 500 mA, t
r
< 0.5 μs, t
p
> 6 μs
150 A/μs
Maximum holding current I
H
T
J
= 25 °C, anode supply = 6 V,
resistive load, gate open circuit
200
mA
Maximum latching current I
L
T
J
= 25 °C, anode supply = 6 V, resistive load 400
VS-VSKU41.., VS-VSKV41.., VS-VSKU56.., VS-VSKV56.. Series
www.vishay.com
Vishay Semiconductors
Revision: 24-Mar-14
3
Document Number: 94653
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VS-VSK.41 VS-VSK.56 UNITS
Maximum peak gate power P
GM
10
W
Maximum average gate power P
G(AV)
2.5
Maximum peak gate current I
GM
2.5 A
Maximum peak negative gate voltage - V
GM
10
V
Maximum gate voltage required to trigger V
GT
T
J
= - 40 °C
Anode supply = 6 V
resistive load
4.0
T
J
= 25 °C 2.5
T
J
= 125 °C 1.7
Maximum gate current required to trigger I
GT
T
J
= - 40 °C
Anode supply = 6 V
resistive load
270
mAT
J
= 25 °C 150
T
J
= 125 °C 80
Maximum gate voltage that will not trigger V
GD
T
J
= 125 °C, rated V
DRM
applied 0.25 V
Maximum gate current that will not trigger I
GD
T
J
= 125 °C, rated V
DRM
applied 6 mA
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VS-VSK.41 VS-VSK.56 UNITS
Maximum peak reverse and off-state
leakage current at V
RRM
, V
DRM
I
RRM,
I
DRM
T
J
= 125 °C, gate open circuit 15 mA
Maximum RMS insulation voltage V
INS
50 Hz
3000 (1 min)
3600 (1 s)
V
Maximum critical rate of rise of off-state voltage dV/dt T
J
= 125 °C, linear to 0.67 V
DRM
1000 V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VS-VSK.41 VS-VSK.56 UNITS
Junction operating and storage
temperature range
T
J
, T
Stg
-40 to 125 °C
Maximum internal thermal resistance,
junction to case per leg
R
thJC
DC operation 0.44 0.35
°C/W
Typical thermal resistance,
case to heatsink per module
R
thCS
Mounting surface flat, smooth and
greased
0.1
Mounting torque ± 10 %
to heatsink
A mounting compound is recommended
and the torque should be rechecked after
a period of
3 hours to allow for the spread of the
compound.
4
Nm
busbar 3
Approximate weight
75 g
2.7 oz.
Case style JEDEC
®
AAP GEN VII (TO-240AA)
R CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION
UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.41.. 0.110 0.131 0.17 0.23 0.342 0.085 0.138 0.177 0.235 0.345
°C/W
VSK.56.. 0.088 0.104 0.134 0.184 0.273 0.07 0.111 0.143 0.189 0.275

VS-VSKV56/04

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules 400 Volt 60 Amp 1256 Amp ITSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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