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2SA1576UBTLR

P1-P3
2SA1576UB
1/2
www.rohm.com
○
c
2009 ROHM Co., Ltd. All rights reserved.
2010.09 - Rev.D
General purpose small signal amplifier
(50V, 0.15A)
2SA1576UB
Applications Dimensions (Unit : mm)
General purpose small signal amplifier.
Features
1) Excellent h
FE linearity.
2) Complements the 2SC4081UB.
Structure
PNP silicon epitaxial planar transistor.
Absolute maximum ratings (Ta=25C)
∗1
∗1 Pw=1ms Single pulse
∗2 Each terminal mounted on a recommended land
∗2
Parameter
V
CBO
VCEO
VEBO
IC
ICP
PD
Tj
Tstg
−60 V
V
V
mA
mA
˚C
˚C
−50
−6
−150
mW
−200
200
150
−
55 to +150
Symbol Limits Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Electrical characteristics (Ta=25C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
−60
−50
−6
−
−
120
−
−
−
−
−
−
−
−
−
−
140
4.0
−
−
−
−100
−100
390
−0.5
−
5.0
VI
C
= −50μA
I
C
= −1mA
I
E
= −50μA
V
CB
= −60V
V
EB
= −6V
V
CE
= −6V, I
C
= −1mA
I
C
/I
B
= −50mA/−5mA
V
CE
= −12V, I
E
=2mA, f=100MHz
V
CB
= −12V, I
E
=0A, f=1MHz
V
V
nA
nA
−
V
MHz
pF
Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
UMT3F
Each lead has same dimensions
2.0
0.32
0.65 0.65
1.3
2.1
1.25
0.4250.425
(1) (2)
(3)
0.9
0.530.53
0.13
(1) Base
(2) Emitter
(3) Collector
Abbreviated symbol : F
∗ = Denotes h
FE
∗
2/2
www.rohm.com
○
c
2009 ROHM Co., Ltd. All rights reserved.
2010.09 - Rev.D
Data Sheet 2SA1576UB
h
FE rank categories
Rank
h
FE
Q
120 to 270
R
180 to 390
Electrical characteristic curves
Fig.1 Grounded emitter propagation
characteristics
−0.2
COLLECTOR CURRENT : Ic (
mA)
−50
−20
−10
−5
−2
−1
−0.5
−0.2
−0.1
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
VCE= −6V
BASE TO EMITTER VOLTAGE : VBE (
V
)
Ta=100˚C
25˚C
−40˚C
Fig.2 Grounded emitter output
characteristics (I)
−0.4
−4
−8
−1.20
−2
−6
−10
−0.8 −1.6 −2
.0
−3.5μA
−7.0
−10.5
−14.0
−17.5
−21.0
−24.5
−28.0
−31.5
I
B
=0
Ta=25˚C
−35.0
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR TO MITTER VOLTAGE : V
CE
(
V
)
Fig.3 Grounded emitter output
characteristics (II)
−40
−80
−
5
−3 −4−2−1
−20
−60
−100
0
I
B
=0
Ta=25˚C
COLLECTOR CURRENT : I
C
(
mA
)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V
)
−50μA
−100
−150
−200
−250
−500
−450
−400
−350
−300
Fig.4 DC current gain vs.
collector current (I)
500
200
100
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −10
0
DC CURRENT GAIN : h
FE
Ta=25˚C
V
CE
= −5V
−3V
−1V
COLLECTOR CURRENT : I
C
(
mA)
Fig.5 DC current gain vs.
collector current (II)
500
200
100
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50−10
0
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(
mA)
V
CE
= −6V
Ta=100˚C
−40˚C
25˚C
Fig.6 Collector-emitter saturation
voltage vs. collector current (
I)
−0.1
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −10
0
−1
−0.5
−0.2
−0.05
Ta=25˚C
COLLECTOR CURRENT : I
C
(
mA)
I
C
/I
B
=50
20
10
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V
)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
−0.1
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −10
0
−1
−0.5
−0.2
−0.05
COLLECTOR CURRENT : I
C
(
mA)
l
C
/l
B
=10
Ta=100˚C
25˚C
−40˚C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
Fig.8 Gain bandwidth product vs.
emitter current
50 10
0.5 20
50
100
200
500
12 510
EMITTER CURRENT : I
E
(
mA)
TRANSITION FREQUENCY : f
T
(
MHz)
Ta=25˚C
V
CE
= −12V
Fig.9
Collector output capacitance vs
.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : V
CB
(V
)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE : Cib (
pF)
−0.5 −20
2
5
10
−1 −2 −5 −10
20
Cib
Cob
Ta=25˚C
f=1MHz
I
E
=0A
I
C
=0A
R1010
A
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P1-P3

2SA1576UBTLR

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