MGA-645T6-BLKG Datasheet MGA-645T6-BLKG, MGA-645T6-TR2G, MGA-645T6-TR1G | P1-P3

MGA-645T6

Low Noise Ampliﬁer with Bypass/Shutdown Mode

in Low Proﬁle Package

Data Sheet

Description

Avago Technologies’ MGA-645T6 is an economical,

easy-to-use GaAs MMIC Low Noise Ampliﬁer (LNA) with

Bypass/ Shutdown mode. The LNA has low noise and

high linearity achieved through the use of Avago Tech-

nologies’ proprietary 0.5um GaAs Enhancement-mode

pHEMT process. The Bypass/Shutdown mode enables

the LNA to be bypassed during high input signal power

and reduce current consumption. It is housed in a low

proﬁle 2 x 1.3 x 0.4mm 6-pin Ultra Thin Package. The

compact footprint and low proﬁle coupled with low

noise, high linearity make the MGA-645T6 an ideal choice

as a low noise ampliﬁer for mobile receiver in the WiMax,

WLAN(802.11b/g), WiBro and DMB applications.

Component Image

Features

x 2.0 x 1.3 x 0.4 mm

6-lead Ultra Thin Package

x Low bias current

x Simple matching network

x 1.5 GHz – 3 GHz operating range

x Adjustable bias current

x Low Noise Figure

x Bypass/Shutdown Mode using a single pin

x Low current consumption in Bypass Mode, <100uA

x Fully matched to 50 ohm in Bypass Mode

x High Linearity (LNA and Bypass Mode)

x Low proﬁle package

Typical Performance

2.4 GHz; 3V, 7mA (typ):

x 15 dB Gain

x 1.1 dB Noise Figure with 9dB Input Return Loss

x +7 dBm Input IP3

x -5 dBm Input Power at 1dB gain compression

x 4.5 dB Insertion Loss in Bypass Mode

x 16dBm IIP3 in Bypass Mode (Pin = -20dBm)

x <100uA current consumption in Bypass & Shutdown

Mode

Applications

x Low noise ampliﬁer for GPS, WiMax, WLAN, WiBro and

DMB applications.

x Other ultra low noise applications in the 1.5 – 3 GHz

band

Simpliﬁed Schematic

Pin Conﬁguration

Note:

Package marking provides

orientation and identiﬁcation

“4F” = Product Code

“Y” = Year of manufacture

“M” = Month of manufacture

4FYM

bias/control

MGA-645T6

RFout

RFin

Vdd

Vbypass

C1 C2

Top View

Attention: Observe precautions for handling

electrostatic sensitive devices.

ESD Machine Model = 60 V

ESD Human Body Model = 200 V

Refer to Avago Application Note A004R:

Electrostatic Discharge, Damage and Control.

GND

Pin 1

(Vbypass)

Pin 2

(RF_IN)

Pin 3

(GND)

Pin 6

(Not Used)

Pin 5

(RF_OUT)

Pin 4

(VDD)

Absolute Maximum Rating

[1]

TA=25°C

Symbol Parameter Units Absolute Max.

Vdd Device Voltage V 4

bypass

Control Voltage V (Vdd-0.3)

in,max

CW RF Input Power dBm +15

diss

Total Power Dissipation

[3]

mW 80

Junction Temperature °C 150

STG

Storage Temperature °C -65 to 150

Notes:

4. Distribution data sample size are 500 samples taken from 3 diﬀerent wafers and 3 diﬀerent lots. Future wafers allocated to this product may have

nominal values anywhere between the upper and lower limits.

Product Consistency Distribution Charts

[4]

Thermal Resistance

[2,3]

(Vdd = 3.0V, Id=7mA), θjc = 60 °C/W

Notes:

1. Operation of this device in excess of any of

these limits may cause permanent damage.

2. Thermal resistance measured using Infra-

Red Measurement Technique.

3. Board temperature T

is 25 °C , for T

>146

°C derate the device power at 14mW per °C

rise in Board (package belly) temperature.

Figure 1. Gain @ 2.4 GHz , Vd 3V; Vbypass 1.8 V,

LSL=13.5, Nominal=15.0, USL=16.5

Figure 2. NF @ 2.4 GHz , Vd 3V; Vbypass 1.8 V,

Nominal=1.1, USL=1.5

Figure 3. Ids @ 2.4 GHz , Vd 3V; Vbypass 1.8 V,

Nominal=7.0, USL=13.0

Electrical Speciﬁcations

[5,7]

= 25 °C, Vdd =3V, Vbypass = 1.8V, RF measurement at 2.4 GHz, measured on demo board (see Fig. 4) unless otherwise

speciﬁed.

Symbol Parameter and Test Condition Units Min. Typ. Max.

Id Bias Current mA - 7 13

Gain Gain dB 13.5 15 16.5

NF Noise Figure (Typ.Vbypass=1.8V) dB - 1.1 1.5

IIP3

[6]

Input Third Order Intercept Point dBm - +7 -

OP1dB Output Power at 1dB Gain Compression dBm - +9 -

S11 Input Return Loss, 50Ω source dB - -9 -

S22 Output Return Loss, 50Ω load dB - -15 -

S12 Reverse Isolation dB - -27 -

|S21|2

BYPASS

Bypass Mode Loss (Vbypass = 0) dB - -4.5 -

IIP3

BYPASS

Bypass Mode IIP3 (tested at -20dBm input Power) dBm - 16 -

BYPASS

Bypass Mode current uA - 80 -

Notes:

5. Measurements at 2.4GHz obtained using demo board described in Figure 1, with component values on Figure 2 (2.3 – 2.4 GHz)

6. 2.4GHz I

IP3

test condition: F

RF1

= 2.395 GHz, F

RF2

= 2.4 GHz with input power of -30dBm per tone.

7. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application

note for more details.

Demo Board Layout

Figure 4. Demo Board Layout Diagram *

*Application Notes: -

1. Performance in a speciﬁed frequency band can be

optimized by changing component values in the

demoboard above to suit the application at that

frequency. The schematic on page 4 and 7 show

two sets of components used to demonstrate

performance at the (2.3 - 2.4) GHz Wibro band and

(2.5 - 2.7) GHz Wimax/DMB band.

2. Operational Logic of Bypass/Shutdown pin (Pin 1)

- Normal LNA operation : [1.2 to (Vdd-0.3)] Volt,

- Bypass/Shutdown mode : 0 Volt or Open

Pin 1 voltage in LNA mode can be varied to enable

the LNA bias current to be adjusted, refer to next

graph:

Copper foil

C1 C2

VDD

VBYPASS

GROUND

Figure 5. Id vs Vbypass (Vdd=3V)

1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3

Vsd,V

Id,mA

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P16

MGA-645T6-BLKG

Mfr. #:

Buy MGA-645T6-BLKG

Manufacturer:

Broadcom / Avago

Description:

RF Amplifier LNA for WLAN/WiMAX

Lifecycle:

New from this manufacturer.

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MGA-645T6-BLKG

MGA-645T6-BLKG

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