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1SS133M R0G

P1-P3P4-P4
Small Signal Product
- Fast switching device (t
rr
< 4.0 ns)
- Through-hole mount device type
- DO-34 package (JEDEC DO-204)
- Hermetically sealed glass
- Compression bonded construction
- RoHS compliant
- Solder hot dip Tin (Sn) lead finish
- Cathode indicated by polarity band
- Marking code: 133
SYMBOL UNIT
P
D
mW
W
IV
V
I
O
mA
I
FM
mA
I
FSURGE
A
T
J
o
C
T
STG
o
C
SYMBOL UNIT
B
V
V
V
F
V
I
R
nA
C
j
pF
t
rr
ns
Document Number: DS_S1403003 Version: C15
and leads are readily solderable
DO-34
1SS133M
Taiwan Semiconductor
300mW, Hermetically Sealed Glass Switching Diodes
FEATURES
- All external surfaces are corrosion resistant
4.0
PARAMETER
500
Breakdown Voltage
1.2Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
80
--
--
--
4.0
I
R
=500nA
I
F
=100mA
V
R
=80V
V
R
=0, f=1.0MHz
(Note 1)
Operating Junction Temperature
Notes: 1. Reverse Recovery Test Conditions: I
F
=I
R
=10mA, R
L
=100Ω, I
RR
=1mA
2
450
MIN MAX
Peak Forward Surge Current
90
150
Storage Temperature Range
300
+ 175
VALUE
-65 to +200
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER
Power Dissipation
Working Inverse Voltage
Average Rectified Current
Non-Repetitive Peak Forward Current
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
Document Number: DS_S1403003 Version: C15
1SS133M
Taiwan Semiconductor
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 5 10 15 20 25 30
Capacitance Between Terminals :
C
T
(pF)
Reverse Voltage : V
R
(V)
f = 1 MHz
Fig. 3 Capacitance Between Terminals Characteristics
0
1
2
3
4
5
048121620
Reverse Recovery Time :
tr (ns)
Forward Current : I
F
(mA)
Fig. 4 Reverse Recovery Time Characteristics
1
10
100
0.1 1 10 100 1000 10000
Surge Current : I
SURGE
(A)
Pulse Width : Tw (ms)
Fig. 5 Surge Current Characteristics
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Forward Current : I
F
(mA)
Forward Voltage : V
F
(V)
Fig. 1 Forward Characteristics
T
A
=125
o
C
T
A
=75
o
C
T
A
=25
o
C
T
A
=-25
o
C
1
10
100
1000
10000
0 20406080100120
Reverse Current : I
R
(nA)
Reverse Voltage : V
R
(V)
Fig. 2 Reverse Characteristics
T
A
=25
o
C
T
A
=100
o
C
T
A
=75
o
C
T
A
=50
o
C
V
R
= 6 V
I
rr
= 1/10 I
R
Fig. 6 Reverse Recovery Time ( trr )
Measurement Circuit
Min Max Min Max
A 0.30 0.55 0.012 0.022
B 2.16 3.04 0.085 0.120
C 25.40 38.10 1.000 1.500
D 1.27 2.00 0.050 0.079
Document Number: DS_S1403003 Version: C15
DIM.
Unit(mm) Unit(inch)
1SS133M
Taiwan Semiconductor
Small Signal Product
ORDER INFORMATION (EXAMPLE)
PACKAGE OUTLINE DIMENSIONS
1SS133M R0G
Green compoundcode
Packingcode
Partno.
P1-P3P4-P4

1SS133M R0G

Mfr. #:
Buy 1SS133M R0G
Manufacturer:
Taiwan Semiconductor
Description:
Diodes - General Purpose, Power, Switching Switching diode 300mW
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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