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MS1004

P1-P3P4-P5
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1004
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:DESCRIPTION:
The MS1004 is a 50V epitaxial silicon NPN planar transistor
designed primarily for SSB and VHF communications.
This device utilizes emitter ballasting for improved ruggedness
and reliability.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
110
V
V
CEO
Collector-Emitter Voltage 55 V
V
EBO
Emitter-Base Voltage 4.0 V
I
C
Device Current 40 A
P
DISS
Total Dissipation 330 W
T
J
Junction Temperature 200
°°C
T
STG
Storage Temperature -65 to +150
°°C
Thermal DataThermal Data
R
TH(J-C)
Thermal Resistance Junction-case
0.4
°°C/W
FeaturesFeatures
• 30 MHz
• 50 VOLTS
• P
OUT
= 250 WATTS
• G
P
= 14.5 dB MINIMUM
• IMD = -30 dB
• GOLD METALIZATION
• COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1004
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATICSTATIC
Value
Symbol Test Conditions
Min.
Typ.
Max.
Unit
BV
CES
I
C
= 200 mA V
BE
= 0 V 110 --- --- V
BV
CEO
I
C
= 200 mA I
B
= 0 mA 55 --- --- V
BV
EBO
I
E
= 20 mA I
C
= 0 mA 4.0 --- ---
V
I
CEO
V
CE
= 30 V I
E
= 0 mA --- --- 10 mA
I
CES
V
CE
= 60 V I
E
= 0 mA --- --- 10 mA
h
FE
V
CE
= 6 V I
C
= 10 A 15 --- 45 ---
DYNAMICDYNAMIC
Value
Symbol Test Conditions
Min.
Typ.
Max.
Unit
P
OUT
f = 30MHz V
CC
= 50 V I
CQ
=150 mA 250 --- --- WPEP
G
P
f = 30MHz V
CC
= 50 V I
CQ
=150 mA 14.5 --- ---
dB
IMD* f = 30MHz V
CC
= 50 V I
CQ
=150 mA -- --- -30 dBc
ηη
C
f = 30MHz V
CC
= 50 V I
CQ
=150 mA 37 --- --- %
C
OB
f = 1 MHz V
CB
=50 V --- --- 360 pf
Condition
s
f1 = 30.000 MHz f2 = 30.001 MHz
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1004
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
TYPICAL PERFORMANCETYPICAL PERFORMANCE
P1-P3P4-P5

MS1004

Mfr. #:
Buy MS1004
Manufacturer:
Microchip / Microsemi
Description:
RF Bipolar Transistors Comm/Bipolar Transistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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