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MBT3946DW1T1G

P1-P3P4-P6P7-P9P10-P11
MBT3946DW1T1G, SMBT3946DW1T1G
http://onsemi.com
7
(PNP)
Figure 20. Delay and Rise Time
Equivalent Test Circuit
Figure 21. Storage and Fall Time
Equivalent Test Circuit
3 V
275
10 k
1N916
C
s
< 4 pF*
3 V
275
10 k
C
s
< 4 pF*
< 1 ns
+0.5 V
10.6 V
300 ns
DUTY CYCLE = 2%
< 1 ns
+9.1 V
10.9 V
DUTY CYCLE = 2%
t
1
0
10 < t
1
< 500 ms
* Total shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
Figure 22. Capacitance
REVERSE BIAS (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 23. Charge Data
I
C
, COLLECTOR CURRENT (mA)
5000
1.0
V
CC
= 40 V
I
C
/I
B
= 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20
30 40
0.2 0.3 0.5 0.7
Q
T
Q
A
C
ibo
C
obo
T
J
= 25°C
T
J
= 125°C
(PNP)
(PNP)
Figure 24. Turn-On Time
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
TIME (ns)
1.0 2.0 3.0 10 20
70
5
100
Figure 25. Fall Time
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0
30 50
200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0
30 50
200
10
30
7
20
t , FALL TIME (ns)
f
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 10
t
r
@ V
CC
= 3.0 V
t
d
@ V
OB
= 0 V
40 V
15 V
2.0 V
(PNP) (PNP)
MBT3946DW1T1G, SMBT3946DW1T1G
http://onsemi.com
8
(PNP)
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= −5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
Figure 26.
f, FREQUENCY (kHz)
2.0
3.0
4.0
5.0
1.0
0.1
Figure 27.
R
g
, SOURCE RESISTANCE (k OHMS)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20
40
0.2 0.4
0
100
4
6
8
10
12
2
0.1 1.0 2.0 4.0 10 20
40
0.2 0.4
100
NF, NOISE FIGURE (dB)
f = 1.0 kHz
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50 mA
I
C
= 100 mA
SOURCE RESISTANCE = 200 W
I
C
= 1.0 mA
SOURCE RESISTANCE = 200 W
I
C
= 0.5 mA
SOURCE RESISTANCE = 2.0 k
I
C
= 100 mA
SOURCE RESISTANCE = 2.0 k
I
C
= 50 mA
(PNP)
(PNP)
h PARAMETERS
(V
CE
= −10 Vdc, f = 1.0 kHz, T
A
= 25°C)
Figure 28. Current Gain
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 29. Output Admittance
I
C
, COLLECTOR CURRENT (mA)
h , DC CURRENT GAIN
h , OUTPUT ADMITTANCE ( mhos)
Figure 30. Input Impedance
I
C
, COLLECTOR CURRENT (mA)
Figure 31. Voltage Feedback Ratio
I
C
, COLLECTOR CURRENT (mA)
30
100
50
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0
5.0
0.5
10
0.3 0.5 3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , INPUT IMPEDANCE (k OHMS)
ie
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
7
5
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
fe
m
70
30
0.7
7.0
0.7
7.0
7.0
3.0
0.7
0.3
0.7
7.0
0.7
7.0
h , VOLTAGE FEEDBACK RATIO (x 10 )
re
-4
(PNP)
(PNP)
(PNP)
(PNP)
MBT3946DW1T1G, SMBT3946DW1T1G
http://onsemi.com
9
(PNP)
TYPICAL STATIC CHARACTERISTICS
Figure 32. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT GAIN (NORMALIZED)
0.5 2.0 3.0 10 50
70
0.2 0.3
0.1
100
1.00.7
200
30205.0 7.0
FE
V
CE
= 1.0 V
T
J
= +125°C
+25°C
-55°C
(PNP)
Figure 33. Collector Saturation Region
I
B
, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
0
1.00.7 5.0 7.0
CE
I
C
= 1.0 mA
T
J
= 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
(PNP)
Figure 34. “ON” Voltages
I
C
, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 35. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20
50
0
100
-0.5
0
0.5
1.0
0 60 80 120 140 160
180
20 40
100
200
-1.0
-1.5
-2.0
200
T
J
= 25°C V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 1.0 V
+25°C TO +125°C
-55°C TO +25°C
+25°C TO +125°C
-55°C TO +25°C
q
VC
FOR V
CE(sat)
q
VB
FOR V
BE(sat)
, TEMPERATURE COEFFICIENTS (mV/ C)°
V
q
(PNP)
(PNP)
P1-P3P4-P6P7-P9P10-P11

MBT3946DW1T1G

Mfr. #:
Buy MBT3946DW1T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 200mA 40V Dual Complementary
Lifecycle:
New from this manufacturer.
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