011
400
800
1200
1600
2000
V
F
[V]
I
F
[A]
0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
20
40
60
80
100
10
-3
10
-2
10
-1
10
0
200
300
400
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 25 50 75 100 125 150 1750 4 8 12 16 20 24 28 32
0
8
16
24
32
0 25 50 75 100 125 150
0
20
40
60
80
100
I
FSM
[A]
t [s]
t [ms]
I
2
t
[A
2
s]
P
tot
[W]
I
dAVM
[A]
T
A
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
t [ms]
Constants for Z
thJC
calculation:
i R
th
(K/W) t
i
(s)
1 0.0607 0.0004
2 0.1230 0.00256
3 0.2305 0.0045
4 0.4230 0.0242
5 0.2628 0.1800
0.8 x V
RRM
50 Hz
T
VJ
= 45°C
V
R
= 0 V
R
thJA
:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=
125°C
150°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 150°C
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
t vs. time per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 6 Transient thermal impedance junction to case vs. time per diode
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
= 45°C
Rectifier
IXYS reserves the right to change limits, conditions and dimensions.
20151102cData according to IEC 60747and per semiconductor unless otherwise specified
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