CPDQC5V0HE-HF
Page 1
Comchip Technology CO., LTD.
REV:D
QW-G7070
RoHS Device
Halogen Free
Company reserves the right to improve product design , functions and reliability without notice.
Features
- Bi-directional ESD protection
- IEC 61000-4-5 (surge) ; IPP=8A
- IEC 61000-4-2 (ESD) ; ±30KV(contact)
- Low clamping voltage
- Low leakage current
- High surge current
Mechanical data
- Mounting position: Any.
- Weight: 0.001 grams(approx.).
- Case: 0402C/SOD-923F standard package,
molded plastic.
Maximum Rating (at TA=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
Conditions
Peak pulse power
PPP W
128
Operation temperature range
Tj
°C
Storage temperature range
TSTG
-55~+150
°C
ESD
kV
IEC 61000-4-2(air)
IEC 61000-4-2(contact)
ESD capability
-40~+125
Symbol
Typ
Parameter
Min
Max
Unit
Conditions
Diode breakdown voltage
VBR V
IT = 1mA
5.5
Reverse current
IR
uA
VRWM = 5V
1.0
Clamping voltage
VC
V
16
IPP = 8A, TP = 8/20us
V
Working peak reverse voltage
VRWM
5
Peak pulse current
IPP A
TP = 8/20us
8
TP = 8/20us
±30
Junction capacitance
20
CJ
pF
VR = 0V, f = 1MHz
Electrical Characteristics (at TA=25°C unless otherwise noted)
7.0
15
0.1
ESD
IPP = 1A, TP = 8/20us
11
VC
±30
V
Dimensions in inches and (millimeter)
0402C/SOD-923F
0.022(0.55)
0.018(0.45)
0.001(0.02)
Max.
0.041(1.05)
0.037(0.95)
0.026(0.65)
BSC.
0.012(0.30)
0.008(0.20)
0.022(0.55)
0.018(0.45)
0.026(0.65)
0.022(0.55)
Circuit Diagram
- Terminals: Gold plated, solderable per
MIL-STD-750, method 2026
SMD ESD Protection Diode
