Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
1PS70SB10,115
P1-P3
P4-P6
P7-P9
P10-P10
NXP Semiconductors
1PS70SB10
Schottky barrier single diode
1PS70SB10
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
17 December 2012
3 / 9
10.
Characteristics
T
able 7.
Characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
I
F
= 0.1 mA; T
amb
= 25 °C
-
-
240
mV
I
F
= 1 mA; T
amb
= 25 °C
-
-
320
mV
I
F
= 10 mA; T
amb
= 25 °C
-
-
400
mV
I
F
= 30 mA; T
amb
= 25 °C
-
-
500
mV
V
F
forward voltage
I
F
= 100 mA; T
amb
= 25 °C
-
-
800
mV
I
R
reverse current
V
R
= 25 V; pulsed; t
p
= 300 µs;
δ = 0.02 ; T
amb
= 25 °C
-
-
2
µA
C
d
diode capacitance
V
R
= 1 V; f = 1 MHz; T
amb
= 25 °C
-
-
10
pF
006aac829
V
F
(V)
0.0
1.2
0.8
0.4
1
10
10
2
10
3
I
F
(mA)
10
-1
(1)
(1)
(2)
(2)
(3)
(3)
(1) T
amb
= 125 °C
(2) T
amb
= 85 °C
(3) T
amb
= 25 °C
Fig. 1.
Forward current as a function of forward
voltage; typical values
aaa-004515
V
R
(V)
0
30
20
10
1
10
10
2
10
3
I
R
(µA)
10
-1
(1)
(2)
(3)
(1) T
amb
= 125 °C
(2) T
amb
= 85 °C
(3) T
amb
= 25 °C
Fig. 2.
Reverse current as a function of reverse
voltage; typical values
NXP Semiconductors
1PS70SB10
Schottky barrier single diode
1PS70SB10
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
17 December 2012
4 / 9
006aac891
V
R
(V)
0
30
20
10
4
6
2
8
10
C
d
(pF)
0
T
amb
= 25 °C; f = 1 MHz
Fig. 3.
Diode capacitance as a function of reverse voltage; typical values
1
1.
T
est information
1
1.1
Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
12.
Package outline
04-11-04
Dimensions in mm
0.45
0.15
1.1
0.8
2.2
1.8
2.2
2.0
1.35
1.15
1.3
0.4
0.3
0.25
0.10
1
2
3
Fig. 4.
Package outline SC-70 (SOT323)
NXP Semiconductors
1PS70SB10
Schottky barrier single diode
1PS70SB10
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
17 December 2012
5 / 9
13.
Soldering
solder lands
solder resist
occupied area
solder paste
sot323_fr
2.65
2.35
0.6
(3×)
0.5
(3×)
0.55
(3×)
1.325
1.85
1.3
3
2
1
Dimensions in mm
Fig. 5.
Reflow soldering footprint for SC-70 (SOT323)
sot323_fw
3.65
2.1
1.425
(3×)
4.6
09
(2×)
2.575
1.8
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
Fig. 6.
W
ave soldering footprint for SC-70 (SOT323)
14.
Revision history
T
able 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
1PS70SB10 v
.2
20121217
Product data sheet
-
1PS70SB10_14_15_16
v
.1
P1-P3
P4-P6
P7-P9
P10-P10
1PS70SB10,115
Mfr. #:
Buy 1PS70SB10,115
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers DIODE SCHOTTKY TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
1PS70SB10,115