Characteristics STPS340
2/15 DocID3624 Rev 12
1 Characteristics
To evaluate the conduction losses, use the following equation:
P = 0.42 x I
F(AV)
+ 0.050 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at T
amb
= 25 °C unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 40 V
I
F(RMS)
Forward rms current DPAK 6 A
I
F(AV)
Average forward current,
δ = 0.5, square wave
T
c
= 135 °C DPAK
3A
T
I
= 105 °C SMC
T
l
= 95 °C SMB
T
l
= 115 °C SMBflat
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 75 A
P
ARM
(1)
Repetitive peak avalanche power t
p
= 10 µs, T
j
= 125 °C 90 W
T
stg
Storage temperature range -65 to +150 °C
T
j
Maximum operating junction temperature
(2)
150 °C
1. For pulse time duration derating, please refer to Figure 4. More details regarding the avalanche energy measurements and
diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal parameters
Symbol Parameter Max. value Unit
R
th(j-l)
Junction to lead
SMC 20
°C/W
SMB 25
SMBflat 15
R
th(j-c)
Junction to case DPAK 5.5
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-20µA
T
j
= 125 °C - 2 10 mA
V
F
(1)
Forward voltage drop
T
j
= 25 °C
I
F
= 3 A
-0.63
V
T
j
= 125 °C - 0.52 0.57
T
j
= 25 °C
I
F
= 6 A
-0.84
T
j
= 125 °C - 0.63 0.72
1. Pulse test: t
p
= 380 µs, < 2%
