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IXXH40N65B4D1

P1-P3P4-P6P7-P7
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXH40N65B4D1
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
0 20 40 60 80 100 120 140 160 180 200 220
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40
o
C
150
o
C
25
o
C
Fig. 10. Reverse-Bias Safe Operating Area
0
10
20
30
40
50
60
70
80
90
100 200 300 400 500 600 700
V
CE
- Volts
I
C
- Amperes
T
J
= 150
o
C
R
G
= 5
Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 10203040506070
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 325V
I
C
= 40A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
C
ies
C
oes
C
res
Fig. 11. Maximum Transient Thermal Impedance (IGBT)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- K / W
© 2017 IXYS CORPORATION, All Rights Reserved
IXXH40N65B4D1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
1
2
3
4
5
6
7
5 10152025303540455055
R
G
- Ohms
E
off
- MilliJoules
1
3
5
7
9
11
13
15
E
on
- MilliJoules
E
off
E
on
T
J
= 150
o
C , V
GE
= 15V
V
CE
= 400V
I
C
= 40A
I
C
= 80A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
60
70
80
90
100
110
120
130
140
5 10152025303540455055
R
G
- Ohms
t
f i
- Nanoseconds
50
100
150
200
250
300
350
400
450
t
d(off)
- Nanoseconds
t
f i
t
d(off)
T
J
= 150
o
C, V
GE
= 15V
V
CE
= 400V
I
C
= 80A
I
C
= 40A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
20 25 30 35 40 45 50 55 60 65 70 75 80
I
C
- Amperes
E
off
- MilliJoules
0
1
2
3
4
5
6
7
8
E
on
- MilliJoules
E
off
E
on
R
G
= 5
Ω ,
V
GE
= 15V
V
CE
= 400V
T
J
= 25
o
C
T
J
= 150
o
C
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0
1
2
3
4
5
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
2
4
6
8
10
E
on
- MilliJoules
E
off
E
on
R
G
= 5
Ω ,
V
GE
= 15V
V
CE
= 400V
I
C
= 40A
I
C
= 80A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
0
20
40
60
80
100
120
140
160
180
200
20 25 30 35 40 45 50 55 60 65 70 75 80
I
C
- Amperes
t
f i
- Nanosecond
s
90
100
110
120
130
140
150
160
170
180
190
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 150
o
C
T
J
= 25
o
C
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
20
40
60
80
100
120
140
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanosecond
s
60
80
100
120
140
160
180
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 80A
I
C
= 40A
I
C
= 80A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXH40N65B4D1
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
0
20
40
60
80
100
120
140
160
180
20 25 30 35 40 45 50 55 60 65 70 75 80
I
C
- Amperes
t
r i
- Nanosecond
s
14
16
18
20
22
24
26
28
30
32
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 25
o
C, 150
o
C
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
140
160
180
200
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanosecond
s
14
16
18
20
22
24
26
28
30
32
34
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 80A
I
C
= 40A
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
0
40
80
120
160
200
240
280
320
5 10152025303540455055
R
G
- Ohms
t
r i
- Nanosecond
s
0
15
30
45
60
75
90
105
120
t
d(on)
- Nanoseconds
t
r i
t
d(on)
T
J
= 150
o
C, V
GE
= 15V
V
CE
= 400V
I
C
= 40A
I
C
= 80A
P1-P3P4-P6P7-P7

IXXH40N65B4D1

Mfr. #:
Buy IXXH40N65B4D1
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
Lifecycle:
New from this manufacturer.
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