MJ11021(PNP) MJ11022 (NPN)
http://onsemi.com
3
t, TIME (ms)
1.0
0.01
0.01
0.1
r(t), EFFECTIVE TRANSIENT THERMAL
1.0 1.0 100
R
q
JC
(t) = r(t) R
q
JC
R
q
JC
(t) = 0.86°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
q
JC
(t)
P
(pk)
t
1
t
2
SINGLE PULSE
RESISTANCE (NORMALIZED)
100
D = 0.5
0.2
0.05
DUTY CYCLE, D = t
1
/t
2
Figure 3. Thermal Response
0.05
0.03
0.02
0.07
0.5
0.3
0.2
0.7
0.02 0.03 0.05 0.2 0.3 0.5 2.0 3.0 5.0 200 300 50010 20 30 50
0.1
0.02
0.01
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0 10 20 2003.0 50 100
Figure 4. Maximum Rated Forward Bias Safe
Operating Area (FBSOA)
0.3
0.2
0
0.5
7.0 30 70 150
dc
0.1 ms
3.0
2.0
1.0
5.0
30
20
10
I
C
, COLLECTOR CURRENT (AMPS)
T
J
= 175°C
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITATION @ T
C
= 25°C
SINGLE PULSE
0.5ms
1.0ms
5.0ms
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on T
J(pk)
= 175_C, T
C
is
variable dependIng on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v 175_C. T
J(pk)
may be calculated from the data in
Figure 3. At high case temperatures thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
20 100 140 2600 180 22060
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
20
0
Figure 5. Maximum RBSOA, Reverse Bias Safe
Operating Area
10
30
I
C
, COLLECTOR CURRENT (AMPS)
L = 200 mH
I
C
/I
B1
≥ 50
T
C
= 25°C
V
BE(off)
0 - 5.0 V
R
BE
= 47 W
DUTY CYLE = 10%
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be hold to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 5 gives ROSOA characteristics.
