TPP25011RL

1/7
TPP25011
®
UNIDIRECTIONAL FUNCTION
PROGRAMMABLE BREAKDOWN VOLTAGE
UP TO 250 V
PROGRAMMABLE CURRENT LIMITATION
FROM 40 mA TO 500 mA
SURGE CURRENT CAPABILITY
I
PP
= 30A 10/1000 µs
FEATURES
SO-8
Dedicated to sensitive telecom equipment protec-
tion, this device can provide both voltage and cur-
rent triggered protection with a very tight tolerance.
The breakdown voltage can be easily programmed
by using an external zener diode.
A multiple protection mode can be also performed
when using several zener diodes, providing to
each line interface an optimized protection level.
The current limiting function is achieved with the
use of a resistor between the gate and the cath-
ode. The value of the resistor will determine the
level of the desired current.
DESCRIPTION
SCHEMATIC DIAGRAM
OVERVOLTAGE and OVERCURRENT
PROTECTION for TELECOM LINE
October 2003 - Ed: 5
Application Specific Discretes
A.S.D.™
TM: ASD is trademarks of STMicroelectronics.
CCITT K17 : 10/700 µs 1.5 kV
5/310 µs38A
VDE 0433 : 10/700 µs2kV
5/310 µs 40 A (*)
CNET : 0.5/700 µs 1.5 kV
0.2/310 µs38A
FCC part 68 : 2/10 µs 2.5 kV
2/10 µs 75 A (*)
BELLCORE
TR-NWT-000974 : 10/1000 µs1kV
10/1000 µs 30 A (*)
(*) with series resistors or PTC.
COMPLIES WITH THE FOLLOWING STANDARDS :
TPP25011
2/7
Symbol Parameter Value Unit
R
th (j-a)
Junction to ambient
170 °C/W
THERMAL RESISTANCES
Symbol Parameter Value Unit
I
PP
Peak pulse current (see note 1)
10/1000µs
5/310µs
2/10µs
30
40
75
A
I
TSM
Non repetitive surge peak on-state current
(F = 50Hz)
t
p
= 10ms
t=1s
5
3.5
A
T
stg
T
j
Storage temperature range
Maximum junction temperature
-55to+150
150
°C
ABSOLUTE MAXIMUM RATINGS (T
amb
=2C)
Note 1 : Pulse waveform :
10/1000µst
r
=10µst
p
=1000µs
5/310µst
r
=5µst
p
=310µs
2/10µst
r
=2µst
p
=10µs
100
50
%I
PP
t
t
r
p
0
t
TPP25011
3/7
Symbol Parameter
V
RM
Stand-off voltage
I
RM
Leakage current at stand-off voltage
V
BR
Breakdown voltage
V
BO
Breakover voltage
I
H
Holding current
I
BO
Breakover current
I
PP
Peak pulse current
V
GN
Gate voltage
I
G
Gate triggering current
C
Capacitance
ELECTRICAL CHARACTERISTICS (T
amb
= 25°C)
Note 1: See the reference test circuit 1.
Note 2: See test circuit 2.
Note 3: V
R
= 5V, F = 1MHz
Type I
RM
@V
RM
V
BR
@I
R
V
BO
@I
BO
I
H
C
max. min. max. min.
note1
max. min.
note 2
max.
note 3
µAV VmAVmAmAmApF
TPP25011
6 60 250 1 340 15 200 180 100
1 - OPERATION WITHOUT GATE
Type V
GN
@I
GN
=30mA
I
G
min. max. min. max.
note 4 V
A-C
= 100 V
V VmAmA
TPP25011
1.05 1.35 5 40
2 - OPERATION WITH GATE

TPP25011RL

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Thyristor Surge Protection Devices (TSPD) 250V 30A Unidirect
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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