VS-80EBU04
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Vishay Semiconductors
Revision: 09-Jun-15
5
Document Number: 93025
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 10 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95240
Part marking information www.vishay.com/doc?95370
Application note www.vishay.com/doc?95179
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
2 - Current rating (80 = 80 A)
3 - E = Single diode
4
- B = PowerTab
®
(ultrafast/hyperfast only)
5 - U = Ultrafast recovery
6 - Voltage rating (04 = 400 V)
Device code
5 61 32 4
80VS- E B U 04
1 - Vishay Semiconductors product
