IAM-93516-TR2

Description
Avago Technologies IAM-93516 is a high linearity GaAs FET
Mixer using 0.5um enhancement mode pHEMT technology.
This device houses in a 3x3 LPCC package. The IAM-93516
has a built-in LO buer amplier and an IF amplication
stage that serve as an ideal solution for reducing board
space and delivering excellent high IIP3, gain and isolation
with a low LO drive power. The device is designed with a
dierential conguration to provide good noise immunity.
The LO port is 50 ohm matched and can be driven dier-
ential or single ended. An interstage match is introduced
between the mixer and amplier stage to allow device
tuning at the desired RF and LO frequency. The interstage
match can be a simple low pass, high pass or intermedi-
ate frequency trap. The amplier output port is 200 ohm
matched and fully dierential. The simple matching at
the RF port provides for optimum input return loss, noise
gure and IIP3 performance.
The IAM-93516 is ideally suited for frequency down con-
version for base station radio card receiver, microwave link
receiver, MMDS, modulation and demodulation for receiver
and general purpose resistive FET mixer, which require high
linearity. All devices are 100% RF and DC tested.
Features
DC =5V @ 111mA (Typ.)
RF =1.91 GHz, Pin
RF
= -10 dBm;
LO =1.7 GHz, Pin
LO
= 0 dBm;
IF = 210 MHz unless otherwise specied
High Linearity: 23.1 dBm IIP3(typ)
Conversion Gain: 9.4 dB typical
Low Noise Figure: 11.6 dB
Wide band operation:
400-3000 MHz RF & LO input
70 – 300 MHz IF output
Fully dierential or single ended operation
High P1dB: 19.3 dB typical
Consistent RF performance over LO Power
Low current consumption: 5V@ 111mA typical
Excellent uniformity in product specications
3mm x 3mm x 0.9mm LPCC package
MTTF > 300 years
[1]
MSL-1 and Lead-free.
Applications
Frequency down converter for base station radio card,
microwave link transceiver, and MMDS
Modulation and demodulation for receiver
General purpose resistive FET mixer for other high
linearity applications
IAM - 93516
High Linearity Integrated GaAs Mixer
Data Sheet
2
1.0 Absolute Maximum Ratings
[1]
Symbol Parameter Units Absolute maximum
V
D
Supply Voltage
[2]
V 7
Pin
RF
CW RF Input Power
[2]
dBm 30
Pin
LO
CW LO Input Power
[2]
dBm 18
T
CH
Channel Temperature °C 150
T
STG
Storage Temperature °C -65 to 150
q
ch_b
Thermal Resistance
[4]
°C/W 39
2.0 Product Consistency Distribution Charts
[5,6]
Figure 1. ID (mA)
[7]
Nominal = 111.2mA
Figure 2. GAIN (dB)
[8]
Nominal = 9.4dB Figure 3. IIP3 (dBm)
[8]
Nominal = 23.1dBm
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Determined at DC quiescent conditions and T
A
= 25°C.
3. Board (package belly) temperature T
B
is 25°C. Derate 25 mW/°C for T
B
> 130 °C.
4. Channel-to-board thermal resistance measured using Infra Red Imaging Method and 150
o
C Liquid Crystal Measurement method.
Pin Connections and Package Marking
Interstage Match
Interstage Match
6
7
5
1
16
13
12
LO Buffer
Mixer
3pF
3pF
280 ohm
MIX_OUT+
RF+
RF
-
IFA_IN
-
LO+
LO
-
-
+VDD
MIX_OUT
-
IFA_IN+
14
+VDD
2
3
Amplifier
10
11
IF
-
IF+
2
-
-
-
Stdev=0.74
+3 Std
-3 Std
Id
frequency
107 108 109 110 111 112 113 114
0
100
200
300
400
frequency
Stdev = 0.14
-3 Std
8.8
9.0 9.2 9.4 9.6 9.8
0
30
60
90
120
150
180
+ 3 Std
frequency
Stdev = 0.5
-3 Std
21 22 23 24 25
0
30
60
90
120
150
180
+3 Std
Note:
Package marking provides orientation and identication
“M2” = Device Code
“X” = Month code indicates the month of manufacture
Top View
3
Notes:
5. Distribution data sample size is 510 samples taken from 3 dierent wafers lots. Future wafers allocated to this product may have nominal val-
ues anywhere between the upper and lower limits.
6. Measurements were made on a production test board, which represents a trade-o between optimal Gain, IIP3, NF, P1dB and isolation. Board
losses of 0.1dB at the RF input and IF amplier output have been compensated. Balun loss of 0.57dB which was obtained from the Toko’s sup-
plied s-parameter le is also compensated. The total IF amplier output loss is 0.67dB.
7. The device current is measured without LO signal. At LO=0dBm, the current reduces by around 6 to 7mA.
8. Gain, P1dB, isolation and return loss test conditions: F
RF
=1.91GHz, F
LO
= 1.7GHz, F
IF
= 210MHz, Pin
RF
= -10dBm, Pin
LO
= 0dBm.
IIP3 test condition: F
RF1
= 1.91GHz, F
RF2
= 1.89GHz, F
LO
= 1.7GHz, Pin
RF
= -10dBm, Pin
LO
= 0dBm.
3.0 IAM-93516 Electrical Specications
[6,8]
T
A
= 25
o
C, DC = 5V, RF Freq = 1.91GHz, Pin
RF
= -10dBm, LO Freq = 1.7GHz, Pin
LO
= 0dBm (unless otherwise specied)
4.0 IAM-93516 Typical Performance
[9,10]
T
A
= 25
o
C, DC = 5V, RF Freq = 1.91GHz, Pin
RF
= -10dBm, LO Freq = 1.7GHz (unless otherwise specied)
Figure 4. IAM-93516 demoboard schematic optimally tuned at F
RF
= 1.91GHz and F
LO
= 1.7GHz
Symbol Parameter and Test Condition Units Min. Typ Max.
Id
[7]
Device Current mA 95.0 111.2 125.0
G
C
Conversion Gain dB 7.9 9.4 10.9
IIP3
[8]
Output Third Order Intercept Point dBm 20.5 23.1 -
NF SSB Noise Figure dB - 11.6 -
P1dB Output Power at 1dB Gain Compression dBm - 19.3 -
RL
RF
RF Port Return Loss dB - 12.0 -
RL
LO
LO Port Return Loss dB - 20.0 -
RL
IF
IF Port Return Loss dB - 11.0 -
ISOL
L-R
LO-RF Isolation dB - 26.0 -
ISOL
L-I
LO-IF Isolation dB - 20.0 -
ISOL
R-L
RF-IF Isolation dB - 32.0 -
RF
1.5nH
1.5pF
3.3nH
3.3nH
1.5pF
1nH
0.4pF
39nH
40nH
18pF
22 Ohm
1.5pF
1nH
0.4pF
39nH
40nH
18pF
22 Ohm
Interstage Match
Interstage Match
IF
1000pF
1000pF
LO +
LO -
Balun Transformer
Toko B4F
617DB-1018

IAM-93516-TR2

Mfr. #:
Manufacturer:
Broadcom / Avago
Description:
Up-Down Converters RFIC GaAs Mixer
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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