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BC237BG

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 5
1 Publication Order Number:
BC237/D
BC237B
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
45 Vdc
Collector−Emitter Voltage V
CES
50 Vdc
Collector−Emitter Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
100 mAdc
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
P
D
350
2.8
mW
mW/°C
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
P
D
1.0
8.0
W
mW/°C
Operating and Storage Temperature
Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
q
JA
357 °C/W
Thermal Resistance, Junction−to−Case
R
q
JC
125 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
BC237B TO−92 5000 Units / Bulk
BC237BG TO−92
(Pb−Free)
5000 Units / Bulk
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
BC237BRL1G TO−92
(Pb−Free)
2000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
1
2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 17
MARKING DIAGRAM
BC23
7B
AYWW G
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
BC237B
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
45 − −
V
Emitter−Base Breakdown Voltage
(I
E
= 100 mA, I
C
= 0)
V
(BR)EBO
6.0 − −
V
Collector Cutoff Current
(V
CE
= 50 V, V
BE
= 0)
(V
CE
= 50 V, V
BE
= 0) T
A
= 125°C
I
CES
−
−
0.2
0.2
15
4.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10 mA, V
CE
= 5.0 V)
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 100 mA, V
CE
= 5.0 V)
h
FE
−
200
−
150
290
180
−
460
−
−
Collector−Emitter On Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
(I
C
= 100 mA, I
B
= 5.0 mA)
V
CE(sat)
−
−
0.07
0.2
0.2
0.6
V
Base−Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
(I
C
= 100 mA, I
B
= 5.0 mA)
V
BE(sat)
−
−
0.6
−
0.83
1.05
V
Base−Emitter On Voltage
(I
C
= 100 mA, V
CE
= 5.0 V)
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 100 mA, V
CE
= 5.0 V)
V
BE(on)
−
0.55
−
0.5
0.62
0.83
−
0.7
−
V
DYNAMIC CHARACTERISTICS
Current−Gain — Bandwidth Product
(I
C
= 0.5 mA, V
CE
= 3.0 V, f = 100 MHz)
(I
C
= 10 mA, V
CE
= 5.0 V, f = 100 MHz)
f
T
−
150
100
200
−
−
MHz
Collector−Base Capacitance
(V
CB
= 10 V, I
C
= 0, f = 1.0 MHz)
C
obo
− − 4.5 pF
Emitter−Base Capacitance
(V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz)
C
ibo
− 8.0 − pF
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 V, R
S
= 2.0 kW, f = 1.0 kHz, Df = 200 Hz)
NF
− 2.0 10
dB
BC237B
http://onsemi.com
3
2.0
1.5
1.0
0.2
0.3
0.4
0.6
0.8
2000.2 0.5 1.0 2.0 5.0 10 20 50 100
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
h
FE
, NORMALIZED DC CURRENT GAIN
V
CE
= 10 V
T
A
= 25°C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.20.1 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
V, VOLTAGE (VOLTS)
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 10 V
V
CE(sat)
@ I
C
/I
B
= 10
400
20
30
40
60
80
100
200
300
0.5 1.00.7 2.0 3.0 5.0 7.0 10 20 30 50
I
C
, COLLECTOR CURRENT (mAdc)
Figure 3. Current−Gain — Bandwidth Product
f
T
, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
10
1.0
2.0
3.0
5.0
7.0
0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
V
CE
= 10 V
T
A
= 25°C
T
A
= 25°C
C
ib
C
ob
r
b
, BASE SPREADING RESISTANCE (OHMS)
170
160
150
140
130
120
100.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Base Spreading Resistance
V
CE
= 10 V
f = 1.0 kHz
T
A
= 25°C
P1-P3P4-P4

BC237BG

Mfr. #:
Buy BC237BG
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA 50V NPN
Lifecycle:
New from this manufacturer.
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