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SQ2364EES-T1_GE3

P1-P3P4-P6P7-P7
SQ2364EES
www.vishay.com
Vishay Siliconix
S18-0135-Rev. A, 29-Jan-18
1
Document Number: 75975
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
Marking code: 9Jxxx
FEATURES
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Typical ESD protection 800 V
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. When mounted on 1" square PCB (FR4 material)
PRODUCT SUMMARY
V
DS
(V) 60
R
DS(on)
() at V
GS
= 1.5 V 0.245
I
D
(A) 4
Configuration Single
Package SOT-23
Top View
SOT-23 (TO-236)
1
G
2
S
D
3
N-Channel MOSFET
S
D
G
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
60
V
Gate-source voltage V
GS
± 8
Continuous drain current
T
C
= 25 °C
I
D
2
A
T
C
= 125 °C 1.3
Continuous source current (diode conduction) I
S
2
Pulsed drain current
a
I
DM
8
Single pulse avalanche current
L = 0.1 mH
I
AS
5
Single pulse avalanche energy E
AS
1.25 mJ
Maximum power dissipation
a
T
C
= 25 °C
P
D
3
W
T
C
= 125 °C 1
Operating junction and storage temperature range T
J
, T
stg
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-ambient PCB mount
b
R
thJA
166
°C/W
Junction-to-foot (drain) R
thJF
50
SQ2364EES
www.vishay.com
Vishay Siliconix
S18-0135-Rev. A, 29-Jan-18
2
Document Number: 75975
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0, I
D
= 250 μA 60 - -
V
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 0.46 0.6 1
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 3 V - - ± 100 nA
V
DS
= 0 V, V
GS
= ± 8 V - - ± 5.5
μA
Zero gate voltage drain current I
DSS
V
GS
= 0 V V
DS
= 60 V - - 1
V
GS
= 0 V V
DS
= 60 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 60 V, T
J
= 175 °C - - 150
On-state drain current
a
I
D(on)
V
GS
= 4.5 V V
DS
5 V 2 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 4.5 V I
D
= 2 A, T
J
= 25 °C - 0.190 0.240
V
GS
= 4.5 V I
D
= 2 A, T
J
= 125 °C - - 0.460
V
GS
= 4.5 V I
D
= 2 A, T
J
= 175 °C - - 0.600
V
GS
= 1.5 V I
D
= 2 A - 0.195 0.245
Forward transconductance
b
g
fs
V
DS
= -15 V, I
D
= 1 A - 8.8 - S
Dynamic
b
Input capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz
- 263 330
pFOutput capacitance C
oss
-2835
Reverse transfer capacitance C
rss
-1519
Total gate charge
c
Q
g
V
GS
= 4.5 V V
DS
= 30 V, I
D
= 1.5 A
-22.5
nCGate-source charge
c
Q
gs
-0.3-
Gate-drain charge
c
Q
gd
-0.6-
Gate resistance R
g
f = 1 MHz 2.5 4.1 6.6
Turn-on delay time
c
t
d(on)
V
DD
= 30 V, R
L
= 15
I
D
1.5 A, V
GEN
= 10 V, R
g
= 1
-67.2
ns
Rise time
c
t
r
-1114
Turn-off delay time
c
t
d(off)
-2632
Fall time
c
t
f
-1316
Source-Drain Diode Ratings and Characteristics
b
Pulsed current
a
I
SM
--8A
Forward voltage V
SD
I
F
= 2 A, V
GS
= 0 - 0.8 1.2 V
SQ2364EES
www.vishay.com
Vishay Siliconix
S18-0135-Rev. A, 29-Jan-18
3
Document Number: 75975
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Gate Current vs. Gate-Source Voltage
Output Characteristics
Transconductance
Gate Current vs. Gate-Source Voltage
Transfer Characteristics
On-Resistance vs. Drain Current
10
100
1000
10000
0.00000
0.00025
0.00050
0.00075
0.00100
0.00125
0246810
Axis Title
1st line
2nd line
2nd line
I
GSS
- Gate Current (A)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
J
= 25 °C
10
100
1000
10000
0
1
2
3
4
5
012345
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
2nd line
V
GS
= 4 V thru 1.5 V
V
GS
= 0.5 V
V
GS
= 1 V
10
100
1000
10000
0
3
6
9
12
15
0.00.51.01.52.0
Axis Title
1st line
2nd line
2nd line
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
10
100
1000
10000
10
-10
10
-09
10
-08
10
-07
10
-06
10
-05
10
-04
10
-03
10
-02
10
-01
03691215
Axis Title
1st line
2nd line
2nd line
I
GSS
- Gate Current (A)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
0.0
0.6
1.2
1.8
2.4
3.0
0.0 0.6 1.2 1.8 2.4 3.0
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
0.00
0.09
0.18
0.27
0.36
0.45
0.0 0.8 1.6 2.4 3.2 4.0
2nd line
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
2nd line
V
GS
= 1.5 V
P1-P3P4-P6P7-P7

SQ2364EES-T1_GE3

Mfr. #:
Buy SQ2364EES-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V Vds; +/-8V Vgs SOT-23; 4A Id
Lifecycle:
New from this manufacturer.
Delivery:
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