NXP Semiconductors
BTA410X-800ET
3Q Hi-Com Triac
BTA410X-800ET All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 28 May 2014 6 / 13
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
full cycle or half cycle; with heatsink
compound; Fig. 6
- - 4 K/WR
th(j-h)
thermal resistance
from junction to
heatsink
full cycle or half cycle; without heatsink
compound; Fig. 6
- - 5.5 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air - 55 - K/W
003aaj342
10
-1
10
-2
1
10
Z
th(j-h)
(K/W)
10
-3
t
p
(s)
10
-5
1 1010
-1
10
-2
10
-4
10
-3
(1)
(2)
(3)
(4)
t
p
P
t
(1) Unidirectional (half cycle) without heatsink compound
(2) Unidirectional (half cycle) with heatsink compound
(3) Bidirectional (full cycle) without heatsink compound
(4) Bidirectional (full cycle) with heatsink compound
Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration
9. Isolation characteristics
Table 6. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
RMS isolation voltage from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
T
h
= 25 °C
- - 2500 V
C
isol
isolation capacitance from main terminal 2 to external
heatsink; f = 1 MHz; T
h
= 25 °C
- 10 - pF
NXP Semiconductors
BTA410X-800ET
3Q Hi-Com Triac
BTA410X-800ET All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 28 May 2014 7 / 13
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
0.5 - 10 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
0.5 - 10 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
0.5 - 10 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 8
- - 25 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 8
- - 30 mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 8
- - 25 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - - 15 mA
V
T
on-state voltage I
T
= 15 A; T
j
= 25 °C; Fig. 10 - 1.3 1.6 V
V
D
= 12 V; T
j
= 25 °C; Fig. 11 - 0.7 1 VV
GT
gate trigger voltage
V
D
= 400 V; T
j
= 150 °C; Fig. 11 0.25 0.4 - V
I
D
off-state current V
D
= 800 V; T
j
= 150 °C - 0.4 2 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
50 - - V/µs
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 10 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
2 - - A/ms
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 10 A;
dV
com
/dt = 10 V/µs; gate open circuit
3.5 - - A/ms
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 10 A;
dV
com
/dt = 1 V/µs; gate open circuit
5 - - A/ms
NXP Semiconductors
BTA410X-800ET
3Q Hi-Com Triac
BTA410X-800ET All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 28 May 2014 8 / 13
T
j
(°C)
-50 1501000 50
003aaj344
1
2
3
0
(1)
(2)
(3)
I
GT
I
GT(25°C)
(1) T2- G-
(2) T2+ G-
(3) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-50 1501000 50
003aaj345
1
2
3
0
I
L
I
L(25°C)
Fig. 8. Normalized latching current as a function of
junction temperature
T
j
(°C)
-50 1501000 50
003aaj346
1
2
3
0
I
H
I
H(25°C)
Fig. 9. Normalized holding current as a function of
junction temperature
003aaj347
V
T
(V)
0 321
20
10
30
40
I
T
(A)
0
(1)
(2) (3)
V
o
= 1.142 V; R
s
= 0.027 Ω
(1) T
j
= 150 °C; typical values
(2) T
j
= 150 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage

SDHF2.5KS

Mfr. #:
Manufacturer:
Semtech
Description:
DIODE GEN PURP 2.5KV 2.5A MODULE
Lifecycle:
New from this manufacturer.
Delivery:
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