RN2510,RN2511
2014-03-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2510, RN2511
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
z Including twodevices in SMV (super mini type with 5 leads)
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN1510 and RN1511
Equivalent Circuit
Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
−50 V
Collector-emitter voltage V
CEO
−50 V
Emitter-base voltage V
EBO
−5 V
Collector current I
C
−100 mA
Collector power dissipation P
C
*
300 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Equivalent Circuit
(top view)
JEDEC ―
JEITA ―
TOSHIBA 2-3L1A
Weight: 14 mg (typ.)
Unit: mm
SMV
Start of commercial production
1988-10
