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2SC5754-T2-A

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10008EJ01V0DS (1st edition)
(Previous No. P15573EJ1V0DS00)
Date Published October 2001 CP(K)
NPN SILICON RF TRANSISTOR
NE664M04 / 2SC5754
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
The mark shows major revised points.
FEATURES
• Ideal for 460 MHz to 2.4 GHz medium output power amplification
• PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm
• High collector efficiency:
C = 60%
• UHS0-HV technology (fT = 25 GHz) adopted
• High reliability through use of gold electrodes
• Flat-lead 4-pin thin-type super minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
NE664M04-A
2SC5754-A
50 pcs (Non reel)
• 8 mm wide embossed taping
NE664M04-T2-A
2SC5754-T2-A
3 kpcs/reel
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Data Sheet PU10008EJ01V0DS
2
NE664M04 / 2SC5754
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Symbol
Ratings
Unit
VCBO
13
V
VCEO
5.0
V
VEBO
1.5
V
IC
500
mA
Ptot
Note
735
mW
Tj
150
C
Tstg
65 to +150
C
Note Mounted on 38 38 mm, t = 0.4 mm polyimide PCB
THERMAL RESISTANCE
Symbol
Test Conditions
Ratings
Unit
Rth j-a1
Mounted on 38 38 mm, t = 0.4 mm
polyimide PCB
130
C/W
Rth j-a2
Stand alone device in free air
570
C/W
Data Sheet PU10008EJ01V0DS
3
NE664M04 / 2SC5754
ELECTRICAL CHARACTERISTICS (TA = +25C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
1 000
nA
Emitter Cut-off Current
IEBO
VBE = 1 V, IC = 0 mA
1 000
nA
DC Current Gain
hFE
Note 1
VCE = 3 V, IC = 100 mA
40
60
100
RF Characteristics
Gain Bandwidth Product
fT
VCE = 3 V, IC = 100 mA, f = 0.5 GHz
16
20
GHz
Insertion Power Gain
S21e
2
VCE = 3 V, IC = 100 mA, f = 2 GHz
5.0
6.5
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 3 V, IE = 0 mA, f = 1 MHz
1.0
1.5
pF
Maximum Available Power Gain
MAG
Note 3
VCE = 3 V, IC = 100 mA, f = 2 GHz
12.0
dB
Linear Gain
GL
VCE = 3.6 V, ICq = 20 mA, f = 1.8 GHz,
Pin = 0 dBm, 1/2 Duty
12.0
dB
Gain 1 dB Compression Output Power
PO (1 dB)
VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz,
Pin = 15 dBm, 1/2 Duty
26.0
dBm
Collector Efficiency
C
VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz,
Pin = 15 dBm, 1/2 Duty
60
%
Notes 1. Pulse measurement: PW 350
s, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
hFE CLASSIFICATION
Rank
FB
Marking
R57
hFE Value
40 to 100
(K – (K
2
– 1) )
S21
S12
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

2SC5754-T2-A

Mfr. #:
Buy 2SC5754-T2-A
Manufacturer:
CEL
Description:
RF Bipolar Transistors NPN High Frequency
Lifecycle:
New from this manufacturer.
Delivery:
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