OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

ARF465AG

P1-P3P4-P5
050-4921 Rev B 1-2013
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specifi ed.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 μA)
On State Drain Voltage
1
(I
D
(ON) = 3A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 3A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
MIN TYP MAX
1200
8
25
250
±100
3 4
3 5
UNIT
Volts
μA
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
θ
JC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF465A/B(G)
1200
1200
6
±30
250
0.50
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
°C/W
°C
RF POWER MOSFETs
N-CHANNEL ENHANCEMENT MODE 300V 150W 60MHz
The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull
scientifi c, commercial, medical and industrial RF power amplifi er applications up to 60 MHz.
• Specifi ed 300 Volt, 40.68 MHz Characteristics:
• Output Power = 150 Watts.
• Gain = 13dB (Class C)
• Effi ciency = 75%
• Low Cost Common Source RF Package.
• Low Vth thermal coeffi cient.
• Low Thermal Resistance.
• Optimized SOA for Superior Ruggedness.
ARF465A(G)
ARF465B(G)
*G Denotes RoHS Compliant, Pb Free Terminal Finish
Common
Source
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
TO-247
050-4921 Rev B 1-2013
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
Class C
V
DD
= 300V
P
out
= 150W
GAIN (dB)
ARF465A/B(G)
1
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
Microsemi Reserves the right to change, without notice, the specifi cations and information contained herein.
1 10 100 1200
10
8
6
4
2
0
0 1 2 3 4 5 6 7
CAPACITANCE (pf)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
10,000
5000
1000
500
100
50
10
0.1 1 10 100 300
I
D
, DRAIN CURRENT (AMPERES)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
I
D
, DRAIN CURRENT (AMPERES)
V
DS
> I
D
(ON) x R
DS
(ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
T
J
= -55°C
T
J
= +125°C
T
J
= +25°C
T
C
=+25°C
T
J
=+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
C
iss
C
oss
C
rss
24
10
5
1
.5
.1
1mS
10mS
DC
100uS
25
20
15
10
5
0
10 20 30 40 50 60 70 80 90 100
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 200V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5V
I
D
= I
D[Cont.]
@ 25°C
R
G
= 1.6W
MIN TYP MAX
1200 1500
80 100
30 50
7 15
5 10
21 34
12 25
UNIT
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
η
Ψ
Test Conditions
f = 40.68 MHz
V
GS
= 0V V
DD
= 300V
P
out
= 150W
No Degradation in Output Power
Characteristic
Common Source Amplifi er Power Gain
Drain Effi ciency
Electrical Ruggedness VSWR 6:1
MIN TYP MAX
13 15
70 75
UNIT
dB
%
050-4921 Rev B 1-2013
T
C
, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
0 5 10 15 20 25 30
I
D
, DRAIN CURRENT (AMPERES)
V
GS(th)
, THRESHOLD VOLTAGE
(NORMALIZED)
ARF465A/B(G)
5.5V
4.5V
5V
6V
V
GS
=15V, 10V, 7V
Z
θJC
, THERMAL IMPEDANCE (°C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
6.5V
10
8
6
4
2
0
SINGLE PULSE
0.5
0.1
0.3
0.7
0.9
0.05
1.2
1.1
1
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125
0.60
0.50
0.40
0.30
0.20
0.10
0
Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL
0.0284
0.165
0.307
0.00155F
0.00934F
0.128F
Power
(Watts)
Junction
temp. ( ”C)
RC MODEL
Case temperature
Peak T
J
= P
DM
x Z
θJC
+T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
Table 1 - Typical Class AB Large Signal input - Output Impedance
Freq. (MHz) Z
in
(Ω)Z
OL
(Ω)
2.0
13.5
27
40
65
21.4 - j 8.7
2.6 - j 7.3
.54 - j 2.9
.22 - j .69
.31 + j 1.65
206 - j 45
68 - j 99
22 - j 64
10.5 - j 44
4.4 - j 27
Z
in
- Gate shunted with 25Ω I
DQ
= 100mA
Z
OL
- Conjugate of optimum load for 150 Watts output at V
dd
= 300V
P1-P3P4-P5

ARF465AG

Mfr. #:
Buy ARF465AG
Manufacturer:
Microchip / Microsemi
Description:
RF MOSFET Transistors FG, MOSFET, 1200V, TO-247, RoHS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet