MCP1702
DS22008E-page 4 2010 Microchip Technology Inc.
Dropout Voltage
(Note 1, Note 5)
V
DROPOUT
330 650 mV I
L
= 250 mA, V
R
= 5.0V
525 725 mV I
L
= 250 mA, 3.3V V
R
< 5.0V
625 975 mV I
L
= 250 mA, 2.8V V
R
< 3.3V
750 1100 mV I
L
= 250 mA, 2.5V V
R
< 2.8V
——mVV
R
< 2.5V, See Maximum Output
Current Parameter
Output Delay Time T
DELAY
1000 µs V
IN
= 0V to 6V, V
OUT
= 90% V
R
R
L
= 50 resistive
Output Noise e
N
—8µV/(Hz)
1/2
I
L
= 50 mA, f = 1 kHz, C
OUT
= 1 µF
Power Supply Ripple
Rejection Ratio
PSRR 44 dB f = 100 Hz, C
OUT
= 1 µF, I
L
= 50 mA,
V
INAC
= 100 mV pk-pk, C
IN
= 0 µF,
V
R
=1.2V
Thermal Shutdown
Protection
T
SD
150 °C
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for V
IN
= V
OUT(MAX)
+ V
DROPOUT(MAX)
, Note 1,
I
LOAD
= 100 µA, C
OUT
= 1 µF (X7R), C
IN
= 1 µF (X7R), T
A
= +25°C.
Boldface type applies for junction temperatures, T
J
of -40°C to +125°C. (Note 7)
Parameters Sym Min Typ Max Units Conditions
Note 1: The minimum V
IN
must meet two conditions: V
IN
2.7V and V
IN
V
OUT(MAX)
+ V
DROPOUT(MAX)
.
2: V
R
is the nominal regulator output voltage. For example: V
R
= 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V. The
input voltage V
IN
= V
OUT(MAX)
+ V
DROPOUT(MAX)
or V
IN
= 2.7V (whichever is greater); I
OUT
= 100 µA.
3: TCV
OUT
= (V
OUT-HIGH
- V
OUT-LOW
) *10
6
/ (V
R
* Temperature), V
OUT-HIGH
= highest voltage measured over the
temperature range. V
OUT-LOW
= lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
OUT
.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V
OUT(MAX)
+ V
DROPOUT(MAX)
or 2.7V, whichever is greater.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
2010 Microchip Technology Inc. DS22008E-page 5
MCP1702
TEMPERATURE SPECIFICATIONS (Note 1)
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Operating Junction Temperature Range T
J
-40 +125 °C Steady State
Maximum Junction Temperature T
J
+150 °C Transient
Storage Temperature Range T
A
-65 +150 °C
Thermal Package Resistance (Note 2)
Thermal Resistance, 3L-SOT-23A
JA
336 °C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
JC
—110—°C/W
Thermal Resistance, 3L-SOT-89
JA
153.3 °C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
JC
100 °C/W
Thermal Resistance, 3L-TO-92
JA
131.9 °C/W
JC
66.3 °C/W
Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
2: Thermal Resistance values are subject to change. Please visit the Microchip web site for the latest packaging
information.
MCP1702
DS22008E-page 6 2010 Microchip Technology Inc.
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated: V
R
= 2.8V, C
OUT
= 1 µF Ceramic (X7R), C
IN
= 1 µF Ceramic (X7R), I
L
= 100 µA,
T
A
= +25°C, V
IN
= V
OUT(MAX)
+ V
DROPOUT(MAX)
.
Note: Junction Temperature (T
J
) is approximated by soaking the device under test to an ambient temperature equal to the desired junction
temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant.
FIGURE 2-1: Quiescent Current vs. Input
Voltage.
FIGURE 2-2: Quiescent Current vs.Input
Voltage.
FIGURE 2-3: Quiescent Current vs.Input
Voltage.
FIGURE 2-4: Ground Current vs. Load
Current.
FIGURE 2-5: Ground Current vs. Load
Current.
FIGURE 2-6: Quiescent Current vs.
Junction Temperature.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0.00
1.00
2.00
3.00
4.00
5.00
2 4 6 8 10 12 14
Input Voltage (V)
Quiescent Current (µA)
V
OUT
= 1.2V
+25°C
+130°C
-45°C
0°C
+90°C
0.00
1.00
2.00
3.00
4.00
5.00
35791113
Input Voltage (V)
Quiescent Current (µA)
V
OUT
= 2.8V
+25°C
+130°C
-45°C
0°C
+90°C
1.00
2.00
3.00
4.00
5.00
67891011121314
Input Voltage (V)
Quiescent Current (µA)
V
OUT
= 5.0V
+25°C
+130°C
-45°C
0°C
+90°C
0.00
20.00
40.00
60.00
80.00
100.00
120.00
0 40 80 120 160 200
Load Current (mA)
GND Current (µA)
Temperature = +25°C
V
OUT
= 1.2V
V
IN
= 2.7V
0.00
20.00
40.00
60.00
80.00
100.00
120.00
0 50 100 150 200 250
Load Current (mA)
GND Current (µA)
Temperature = +25°C
V
OUT
= 5.0V
V
IN
= 6.0V
V
OUT
= 2.8V
V
IN
= 3.8V
0.00
0.50
1.00
1.50
2.00
2.50
3.00
-45 -20 5 30 55 80 105 130
Junction Temperature (°C)
Quiescent Current (µA)
I
OUT
= 0 mA
V
OUT
= 5.0V
V
IN
= 6.0V
V
OUT
= 1.2V
V
IN
= 2.7V
V
OUT
= 2.8V
V
IN
= 3.8V

MCP1702T-3302E/CB

Mfr. #:
Manufacturer:
Microchip Technology
Description:
LDO Voltage Regulators LDO w/ Low Quiescent
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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