DMG1023UV-7 Datasheet DMG1023UV-7 | P1-P3

DMG1023UV

Document number: DS31975 Rev. 6 - 2

1 of 6

www.diodes.com

April 2015

DMG1023UV

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Dual P-Channel MOSFET

 Low On-Resistance

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Ultra-Small Surface Mount Package

 ESD Protected Up To 3KV

 Lead Free By Design/RoHS Compliant (Note 1)

 Halogen and Antimony Free "Green" Device (Note 2)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT563

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram Below

 Terminals: Finish - Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.006 grams (approximate)

Ordering Information (Note 3)

Part Number

Case

Packaging

DMG1023UV-7

SOT563

3,000 / Tape & Reel

DMG1023UV-13

SOT563

10,000 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year

2008

2009

2010

2011

2012

2013

2014

2015

2016

2017

Code

V

W

X

Y

Z

A

B

C

D

E

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

Top View

Bottom View

S

1

D

1

D

2

S

2

G

1

G

2

PA1 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: W = 2009)

M = Month (ex: 9 = September)

PA1

YM

ESD PROTECTED TO 3kV

SOT563

DMG1023UV

Document number: DS31975 Rev. 6 - 2

2 of 6

www.diodes.com

April 2015

DMG1023UV

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

-20

V

Gate-Source Voltage

V

GSS

±6

V

Continuous Drain Current (Note 4) V

GS

= -4.5V

Steady

State

T

A

= 25°C

T

A

= 85°C

I

D

-1.03

-0.68

A

Pulsed Drain Current (Note 5)

I

DM

-3

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 4)

P

D

530

mW

Thermal Resistance, Junction to Ambient @T

A

= 25°C (Note 4)

R

θJA

235

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

BV

DSS

-20

-

V

GS

= 0V, I

D

= -250μA

Zero Gate Voltage Drain Current T

J

= 25°C

I

DSS

-

-100

nA

V

DS

= -20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

-

±2.0

μA

V

GS

= ±4.5V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

V

GS(th)

-0.5

-

-1.0

V

DS

= V

GS

, I

D

= -250μA

Static Drain-Source On-Resistance

R

DS (ON)

-

0.5

0.75

Ω

V

GS

= -4.5V, I

D

= -430mA

0.7

1.05

V

GS

= -2.5V, I

D

= -300mA

1.0

1.5

V

GS

= -1.8V, I

D

= -150mA

-

20

V

GS

= -1.7V, I

D

= -100mA

-

25

V

GS

= -1.5V, I

D

= -100mA

Forward Transfer Admittance

|Y

fs

|

-

0.9

-

S

V

DS

= -10V, I

D

= -250mA

Diode Forward Voltage

V

SD

-0.8

-1.2

V

GS

= 0V, I

S

= -150mA

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

C

iss

-

59.76

-

pF

V

DS

= -16V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

-

12.07

-

pF

Reverse Transfer Capacitance

C

rss

-

6.36

-

pF

Total Gate Charge

Q

g

-

622.4

-

pC

V

GS

= -4.5V, V

DS

= -10V,

I

D

= -250mA

Gate-Source Charge

Q

gs

-

100.3

-

pC

Gate-Drain Charge

Q

gd

-

132.2

-

pC

Turn-On Delay Time

t

D(on)

-

5.1

-

ns

V

DD

= -10V, V

GS

= -4.5V,

R

L

= 47Ω, R

G

= 10Ω,

I

D

= -200mA

Turn-On Rise Time

t

r

-

8.1

-

ns

Turn-Off Delay Time

t

D(off)

-

28.4

-

ns

Turn-Off Fall Time

t

f

-

20.7

-

ns

Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.

5. Repetitive rating, pulse width limited by junction temperature.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

DMG1023UV

Document number: DS31975 Rev. 6 - 2

3 of 6

www.diodes.com

April 2015

DMG1023UV

0

0.3

0.6

0.9

1.2

1.5

0 1 2 3 4 5

Fig. 1 Typical Output Characteristic

-V , DRAIN-SOURCE VOLTAGE (V)

DS

-I , DRAIN CURRENT (A)

D

V = -1.2V

GS

V = -1.5V

GS

V = -2.0V

GS

V = -2.5V

GS

V = -3.0V

GS

V = -4.5V

GS

V = -8.0V

GS

0 0.5 1 1.5 2 2.5 3

Fig. 2 Typical Transfer Characteristic

-V , GATE-SOURCE VOLTAGE (V)

GS

0

2

4

6

8

10

-I , DRAIN CURRENT (A)

D

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = -5V

DS

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0 0.3 0.6 0.9 1.2 1.5

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

-I , DRAIN-SOURCE CURRENT (A)

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)



V = -2.5V

GS

V = -4.5V

GS

V = -1.8V

GS

0

0.2

0.4

0.6

0.8

1.0

0 0.3 0.6 0.9 1.2 1.5

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)



-I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = -4.5V

GS

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

0.5

0.7

0.9

1.1

1.3

1.5

1.7

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DSON

V = -4.5V

I = -1.0A

GS

D

V = -2.5V

I = -500mA

GS

D

0

0.2

0.4

0.6

0.8

1.0

1.2

Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

R , DRAIN-SOURCE

ON-RESISTANCE ( )

DSON



V = -4.5V

I = -1.0A

GS

D

V = -2.5V

I = -500mA

GS

D

DMG1023UV-7

DMG1023UV-7

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