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PMCM6501VPEZ
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
NXP Semiconductors
PMCM6501VPE
12 V
, P-channel T
rench MOSFET
PMCM6501VPE
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
10 August 2015
9 / 15
Q
G
(nC)
0
25
20
10
15
5
aaa-019243
-2
-3
-1
-4
-5
V
GS
(V)
0
I
D
= -3 A; V
DS
= -6 V; T
amb
= 25 °C
Fig. 15.
Gate-source voltage as a function of gate
charge; typical values
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
Fig. 16.
MOSFET transistor: Gate charge waveform
definitions
V
SD
(V)
0
-1.2
-0.8
-0.4
aaa-019244
-0.4
-0.8
-1.2
I
S
(A)
0
T
j =
150
°
C
T
j =
25 °
C
V
GS
= 0 V
Fig. 17.
Source current as a function of source-drain voltage; typical values
1
1.
T
est information
t
1
t
2
P
t
006aaa812
duty cycle δ
=
t
1
t
2
Fig. 18.
Duty cycle definition
NXP Semiconductors
PMCM6501VPE
12 V
, P-channel T
rench MOSFET
PMCM6501VPE
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
10 August 2015
10 / 15
12.
Package outline
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
PMCM6501VPE
pmcm6501vpe-ssmos_po
15-07-16
Unit
mm
max
nom
min
0.375
0.215
0.275
1.51
1.01
0.15
0.05
A
Dimensions (mm are the original dimensions)
WLCSP6: wafer level chip-size package; 6 bumps (3 x 2)
PMCM6501VPE
A
1
A
2
0.160
b
D
E
e
1
e
2
0.50
v
w
y
0.05
0.345
0.200
0.260
1.48
0.98
1.00
e
0.50
0.145
0.315
0.185
0.245
1.45
0.95
0.130
0
1 mm
scale
detail X
ball A1
index area
C
e
2
y
C
y
1
X
D
E
A
e
B
e
1
1
2
A
C
B
b
A
C
B
v
C
w
A
A
1
A
2
ball A1
index area
Note
Device back is metal coated on Drain potential.
Fig. 19.
Package outline WLCSP6 (OL-PMCM6501VPE)
NXP Semiconductors
PMCM6501VPE
12 V
, P-channel T
rench MOSFET
PMCM6501VPE
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
10 August 2015
11 / 15
13.
Soldering
Footprint information for reflow soldering
PMCM6501VPE
pmcm6501vpe-ssmos_fr
solder resist
occupied area
solder paste = solderland
Dimensions in mm
0.5
1.7
0.5
0.15
0.35
0 .25
0.25
1.2
Fig. 20.
Reflow soldering footprint for WLCSP6 (OL-PMCM6501VPE)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
PMCM6501VPEZ
Mfr. #:
Buy PMCM6501VPEZ
Manufacturer:
Nexperia
Description:
MOSFET 12V P-Channel Trench MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL
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EMS
Payment:
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