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BAL99LT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 7
1 Publication Order Number:
BAL99LT1/D
BAL99LT1G
Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
R
70 Vdc
Peak Forward Current I
F
100 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR− 5 Board
(Note 1), T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 18
www.onsemi.com
JF Specific Device Code
M = Date Code*
G = Pb−Free Package
MARKING DIAGRAM
ANODE
3
CATHODE
2
1
2
3
Device Package Shipping
†
ORDERING INFORMATION
BAL99LT1G SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
JF MG
G
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
BAL99LT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 70 Vdc)
(V
R
= 25 Vdc, T
J
= 150°C)
(V
R
= 70 Vdc, T
J
= 150°C)
I
R
−
−
−
2.5
30
50
mAdc
Reverse Breakdown Voltage, (I
R
= 100 mAdc)
V
(BR)
70 − Vdc
Forward Voltage,
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
V
F
−
−
−
−
715
855
1000
1250
mV
Recovery Current, (I
F
= 10 mAdc, V
R
= 5.0 Vdc, R
L
= 500 W)
Q
S
− 45 pC
Diode Capacitance, (V
R
= 0, f = 1.0 MHz) C
D
− 1.5 pF
Reverse Recovery Time,
(I
F
= I
R
= 10 mAdc, R
L
= 100 W, measured at I
R
= 1.0 mAdc)
t
rr
− 6.0 ns
Forward Recovery Voltage, (I
F
= 10 mAdc, t
r
= 20 ns) V
FR
− 1.75 Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
BAL99LT1G
www.onsemi.com
3
TYPICAL CHARACTERISTICS
I
R
, REVERSE CURRENT (A)μ
1.0
0.2 0.4
V
F
, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0
1.1
0.1
0.00001
150°C
100
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.0001
10 20 30 40 50
0.60
0
V
R
, REVERSE VOLTAGE (VOLTS)
0.58
0.56
0.48
0.46
C
D
, DIODE CAPACITANCE (pF)
2468
I
F
, FORWARD CURRENT (A)
25°C
-40°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 55°C
T
A
= 25°C
Figure 1. Forward Voltage Figure 2. Leakage Current
Figure 3. Capacitance
0.01
0.001
0.0001
0.3 0.5
0.7 0.9
0.1
125°C
85°C 55°C
-55°C
10
0.001
7060
T
A
= -55°C
0.50
0.52
0.54
1357
P1-P3P4-P4

BAL99LT1G

Mfr. #:
Buy BAL99LT1G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching 70V 100mA
Lifecycle:
New from this manufacturer.
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