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VS-25ETS08STRL-M3

P1-P3P4-P6P7-P7
VS-25ETS08S-M3, VS-25ETS10S-M3, VS-25ETS12S-M3
www.vishay.com
Vishay Semiconductors
Revision: 12-Feb-16
1
Document Number: 94890
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Surface Mount Input Rectifier Diode, 25 A
FEATURES
• Glass passivated pellet chip junction
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Designed and qualified according to
JEDEC
®
-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Input rectification
• Vishay switches and output rectifiers which are available
in identical package outlines
DESCRIPTION
The VS-25ETS..S-M3 rectifier High Voltage Series has been
optimized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has reliable
operation up to 150 °C junction temperature.
PRODUCT SUMMARY
Package TO-263AB (D
2
PAK)
I
F(AV)
25 A
V
R
800 V, 1000 V, 1200 V
V
F
at I
F
1.14 V
I
FSM
300 A
T
j
max. 150 °C
Diode variation Single die
3
Anode
1
Anode
Base
cathode
2
1
2
3
TO-263AB (D
2
PAK)
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C
common heatsink of 1 °C/W
20 23 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Sinusoidal waveform 25 A
V
RRM
800 to 1200 V
I
FSM
300 A
V
F
10 A, T
J
= 25 °C 1.0 V
T
J
-40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
VS-25ETS08S-M3 800 900
1VS-25ETS10S-M3 1000 1100
VS-25ETS12S-M3 1200 1300
VS-25ETS08S-M3, VS-25ETS10S-M3, VS-25ETS12S-M3
www.vishay.com
Vishay Semiconductors
Revision: 12-Feb-16
2
Document Number: 94890
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 106 °C, 180° conduction half sine wave 25
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 250
10 ms sine pulse, no voltage reapplied 300
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 316
A
2
s
10 ms sine pulse, no voltage reapplied 442
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A
2
s
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
25 A, T
J
= 25 °C 1.14 V
Forward slope resistance r
t
T
J
= 150 °C
9.62 m
Threshold voltage V
F(TO)
0.87 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.1
mA
T
J
= 150 °C 1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-40 to +150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 0.9
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
62
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth, and greased 0.5
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-263AB (D
2
PAK)
25ETS08S
25ETS10S
25ETS12S
VS-25ETS08S-M3, VS-25ETS10S-M3, VS-25ETS12S-M3
www.vishay.com
Vishay Semiconductors
Revision: 12-Feb-16
3
Document Number: 94890
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
201510525
30
0
110
130
140
150
80
90
100
120
R
thJC
(DC) = 0.9 K/W
30°
60°
90°
180°
Ø
Conduction angle
120°
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
2015105253035
40
0
110
130
150
90
100
120
140
R
thJC
(DC) = 0.9 K/W
Conduction period
Ø
30°
60°
90°
120°
180°
DC
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
51015
30
25
200
0
35
40
30
25
20
15
5
10
T
J
= 150 °C
Ø
Conduction angle
RMS limit
180°
120°
90°
60°
30°
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
10 20 30
40
0
0
60
50
40
30
10
20
DC
180°
120°
90°
60°
30°
T
J
= 150 °C
Conduction period
Ø
RMS limit
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude Half
Cycle Current Pulses (N)
10 1001
0
100
200
300
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
0.1 1010.01
0
100
200
300
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
P1-P3P4-P6P7-P7

VS-25ETS08STRL-M3

Mfr. #:
Buy VS-25ETS08STRL-M3
Manufacturer:
Vishay
Description:
Schottky Diodes & Rectifiers New Input Diodes - D2PAK-e3
Lifecycle:
New from this manufacturer.
Delivery:
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