©2001 Fairchild Semiconductor Corporation FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
Figure 19. Diode Forward Current vs Forward
Voltage Drop
Figure 20. Recovery Times vs Forward Current
Figure 21. Recovery Times vs Rate of Change of
Current
Figure 22. Stored Charge vs Rate of Change of
Current
Figure 23. Reverse Recovery Softness Factor vs
Rate of Change of Current
Figure 24. Maximum Reverse Recovery Current vs
Rate of Change of Current
Typical Performance Curves (Continued)
0.5 1.0 1.5 2.5
I
EC
, FORWARD CURRENT (A)
V
EC
, FORWARD VOLTAGE (V)
02.0
0
8
12
16
25
o
C
125
o
C
4
24
20
PULSE DURATION = 250
µ
s
DUTY CYCLE < 0.5%,
3.0
100
50
0
t
rr
, REVERSE RECOVERY TIMES (ns)
I
EC
, FORWARD CURRENT (A)
21210
125
75
25
68
150
200
25
o
C t
rr
25
o
C t
a
25
o
C t
b
125
o
C t
b
125
o
C t
a
dI
EC
/dt = 200A/
µ
s, V
CE
= 390V
125
o
C t
rr
4
175
125
o
C t
a
125
o
C t
b
25
o
C t
a
25
o
C t
b
I
EC
= 12A, V
CE
= 390V
300 400 500 700 800
t
rr
, REVERSE RECOVERY TIMES (ns)
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/ms)
200 600
50
0
75
100
125
150
175
900 1000
25
250
150
50
0
Q
rr
, REVERSE RECOVERY CHARGE (nC)
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/
µ
s)
1000500
300
200
100
200 300 400 900600 700 800
125
o
C, I
EC
= 12A
125
o
C, I
EC
= 6A
25
o
C, I
EC
= 6A
25
o
C, I
EC
= 12A
V
CE
= 390V
dI
EC
/dt, CURRENT RATE OF CHANGE (A/
µ
s)
3.0
6.0
5.5
7.0
6.5
V
CE
= 390V, T
J
= 125°C
I
EC
= 12A
I
EC
= 6A
S, REVERSE RECOVERY SOFTNESS FACTOR
700 1000900400200 500 600 800300
4.0
3.5
5.0
4.5
dI
EC
/dt, CURRENT RATE OF CHANGE (A/
µ
s)
3
7
6
10
8
V
CE
= 390V, T
J
= 125°C
I
EC
= 12A
I
EC
= 6A
I
RRM
, MAX REVERSE RECOVERY CURRENT (A)
700 1000900400200 500 600 800300
5
4
9