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NST857BDP6T5G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2008
June, 2017 − Rev. 1
1 Publication Order Number:
NST857BDP6/D
NST857BDP6T5G
Dual General Purpose
Transistor
The NST857BDP6T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT−963
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
Features
• h
FE
, 220−475
• Low V
CE(sat)
, ≤ 0.3 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• This is a Pb−Free Device
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−45 Vdc
Collector−Base Voltage V
CBO
−50 Vdc
Emitter−Base Voltage V
EBO
−6.0 Vdc
Collector Current − Continuous I
C
−100 mAdc
Electrostatic Discharge HBM
MM
ESD
Class
2
B
THERMAL CHARACTERISTICS
Characteristic (Single Heated) Symbol Max Unit
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 1)
P
D
240
1.9
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
(Note 1)
R
q
JA
520 °C/W
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 2)
P
D
280
2.2
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
(Note 2)
R
q
JA
446 °C/W
Characteristic (Dual Heated) (Note 3) Symbol Max Unit
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 1)
P
D
350
2.8
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
(Note 1)
R
q
JA
357 °C/W
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 2)
P
D
420
3.4
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
(Note 2)
R
q
JA
297 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
2. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
3. Dual heated values assume total power is sum of two equally powered channels.
Q
1
(1)(2)
(3)
(4) (5) (6)
Q
2
NST857BDP6T5G
ORDERING INFORMATION
www.onsemi.com
MARKING DIAGRAM
Device Package Shipping
†
NST857BDP6T5G SOT−963
(Pb−Free)
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT−963
CASE 527AD
K M
1
K = Device Code
M = Date Code
NST857BDP6T5G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I
C
= −10 mA) V
(BR)CEO
−45 − − V
Collector−Emitter Breakdown Voltage (I
C
= −10 mA, V
EB
= 0)
V
(BR)CES
−50 − − V
Collector−Base Breakdown Voltage (I
C
= −10 mA)
V
(BR)CBO
−50 − − V
Emitter−Base Breakdown Voltage (I
E
= −1.0 mA)
V
(BR)EBO
−5.0 − − V
Collector Cutoff Current (V
CB
= −30 V)
Collector Cutoff Current (V
CB
= −30 V, T
A
= 150°C)
I
CBO
−
−
−
−
−15
−4.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10 mA, V
CE
= −5.0 V)
(I
C
= −2.0 mA, V
CE
= −5.0 V)
h
FE
−
220
150
290
−
475
−
Collector−Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −0.5 mA)
(I
C
= −100 mA, I
B
= −5.0 mA)
V
CE(sat)
−
−
−
−
−0.3
−0.7
V
Base −Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −0.5 mA)
(I
C
= −100 mA, I
B
= −5.0 mA)
V
BE(sat)
−
−
−0.7
−0.9
−
−
V
Base −Emitter On Voltage
(I
C
= −2.0 mA, V
CE
= −5.0 V)
(I
C
= −10 mA, V
CE
= −5.0 V)
V
BE(on)
−0.6
−
−
−
−0.75
−0.82
V
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −10 mA, V
CE
= −5.0 Vdc, f = 100 MHz)
f
T
100 − − MHz
Output Capacitance
(V
CB
= −10 V, f = 1.0 MHz)
C
obo
− − 4.5 pF
Input Capacitance
(V
EB
= −0.5 V, f = 1.0 MHz)
C
ibo
− − 10 pF
Noise Figure
(I
C
= −0.2 mA, V
CE
= −5.0 Vdc, R
S
= 2.0 kW,
f = 1.0 kHz, BW = 200 Hz)
NF − − 10 dB
100
0
0.0001
0.02
I
C
, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 2. DC Current Gain vs. Collector Current
0.18
0.0001 0.01
I
C
, COLLECTOR CURRENT (A)
0.04
0.001
0.06
500
800
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.08
0.10
I
C
/I
B
= 10
V
CE(sat)
= 150°C
0.10.010.001
25°C
−55°C
400
h
FE
, DC CURRENT GAIN (V)
300
200
0.1
150°C (5.0 V)
150°C (1.0 V)
25°C (5.0 V)
25°C (1.0 V)
−55°C (5.0 V)
−55°C (1.0 V)
0.12
0.14
0.16
600
700
NST857BDP6T5G
www.onsemi.com
3
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.3
0.4
0.5
0.6
0.8
0.9
1.0
0.10.010.0010.0001
0.3
0.4
0.5
0.6
0.7
0.9
1.0
Figure 5. Saturation Region Figure 6. Input Capacitance
I
b
, BASE CURRENT (A) V
eb
, EMITTER BASE VOLTAGE (V)
0.010.0010.0001
0
0.1
0.2
0.4
0.5
0.7
0.9
1.0
4.02.01.00
4
5
6
8
9
Figure 7. Output Capacitance
V
cb
, COLLECTOR BASE VOLTAGE (V)
302520151050
0.5
1.0
2.0
3.0
4.0
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER TURN−ON
VOLTAGE (V)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
C
ibo
, INPUT CAPACITANCE (pF)
C
obo
, OUTPUT CAPACITANCE (pF)
0.7
I
C
/I
B
= 10
−55°C
25°C
150°C
0.8
V
CE
= 2.0 V
25°C
0.3
0.6
0.8
I
C
=
100 mA
50 mA
30 mA
10 mA
3.0 5.0
7
10
C
ib
C
ob
−55°C
150°C
0.00001
3
1.5
2.5
3.5
4.5
P1-P3P4-P4

NST857BDP6T5G

Mfr. #:
Buy NST857BDP6T5G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT DUAL PNP GP TRANS SOT-963
Lifecycle:
New from this manufacturer.
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