1999 Apr 14 3
NXP Semiconductors Product data sheet
PNP switching transistor PZT2907A
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For
other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 106 K/W
R
th j-s
thermal resistance from junction to soldering point 25 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= −50 V − −10 nA
I
E
= 0; V
CB
= −50 V; T
amb
= 150 °C − −10 µA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= −5 V − −50 nA
h
FE
DC current gain I
C
= −0.1 mA; V
CE
= −10 V 75 −
I
C
= −1 mA; V
CE
= −10 V 100 −
I
C
= −10 mA; V
CE
= −10 V 100 −
I
C
= −150 mA; V
CE
= −10 V; note 1 100 300
I
C
= −500 mA; V
CE
= −10 V; note 1 50 −
V
CEsat
collector-emitter saturation voltage I
C
= −150 mA; I
B
= −15 mA; note 1 − −400 mV
I
C
= −500 mA; I
B
= −50 mA; note 1 − −1.6 V
V
BEsat
base-emitter saturation voltage I
C
= −150 mA; I
B
= −15 mA; note 1 − −1.3 V
I
C
= −500 mA; I
B
= −50 mA; note 1 − −2.6 V
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= −10 V; f = 1 MHz − 8 pF
C
e
emitter capacitance I
C
= i
c
= 0; V
EB
= −2 V; f = 1 MHz − 30 pF
f
T
transition frequency I
C
= −50 mA; V
CE
= −20 V;
f
= 100 MHz; note 1
200 − MHz
Switching times (between 10% and 90% levels); (see Fig.2)
t
on
turn-on time I
Con
= −150 mA; I
Bon
= −15 mA;
I
Boff
= 15 mA
− 40 ns
t
d
delay time − 12 ns
t
r
rise time − 30 ns
t
off
turn-off time − 365 ns
t
s
storage time − 300 ns
t
f
fall time − 65 ns
