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MS1261

P1-P3
MS1261
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:DESCRIPTION:
The MS1261 is a Class C 12.5V epitaxial silicon NPN planar
transistor designed primarily for UHF communications. This
devices utilizes a gold metallized, emitter ballasted die
geometry for superior reliability and infinite VSWR capability.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage 36
V
V
CEO
Collector-Emitter Voltage 18 V
V
CES
Collector-Emitter Voltage 36 V
V
EBO
Emitter-Base Voltage 4.0
V
I
C
Device Current 2.5 A
P
DISS
Power Dissipation 34 W
T
J
Junction Temperature +200 ºC
T
STG
Storage Temperature -65 to +150 ºC
TThermal Datahermal Data
R
TH(J-C)
Thermal Resistance Junction-case
8.75
°°C/W
• FeaturesFeatures
• 175 MHz
• 12.5 VOLTS
• P
OUT
= 15 WATTS
• Gp = 12 dB MINIMUM
• INPUT IMPEDANCE MATCHING
• COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1261
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATICSTATIC
Value
Symbol Test Conditions
Min. Typ. Max.
Unit
BV
CES
I
C
= 50 mA V
BE
= 0V 36 --- --- V
BV
CEO
I
C
= 15 mA 18 --- --- V
BV
EBO
I
E
= 2.5 mA I
C
= 0mA 4.0 --- --- V
I
CBO
V
CE
= 15 V I
E
= 0mA --- --- 1 mA
H
FE
V
CE
= 5 V I
C
= 250mA 20 --- 200 ---
DYNAMICDYNAMIC
Value
Symbol Test Conditions
Min. Typ. Max.
Unit
P
OUT
f = 175 MHz P
IN
= 1W V
CE
= 12.5V 15 --- --- W
ηη
c
f = 175 MHz P
IN
= 1W V
CE
= 12.5V 60 --- --- %
G
P
f = 175 MHz P
IN
= 1W V
CE
= 12.5V 12 --- --- dB
C
OB
f = 1 MHz V
CB
= 12.5V --- --- 45 pf
IMPEDANCE DATAIMPEDANCE DATA
FREQ
Z
IN
(Ω)Ω) Z
CL
(Ω)Ω)
175 MHz 1.2 – j0.4 5.2 + j1.1
P
OUT
= 15W
V
CC
= 12.5V
MS1261
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
P1-P3

MS1261

Mfr. #:
Buy MS1261
Manufacturer:
Microchip / Microsemi
Description:
RF Bipolar Transistors Bipolar/LDMOS Transistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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