Product Standards
Transistors with Built-in Resistor
DRC2113Z0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1.
Page
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Parameter Symbol Rating
Operating ambient temperature Topr -40 to
Collector-base voltage (Emitter open) VCBO
pcs / reel (standard)
Emitter
+85 °C
Unit
Panasonic
50 V
Marking Symbol:
N1
Code
1. Base
2.
Embossed type (Thermo-compression sealing) : 3 000
TO-236AA/SOT-23
Packaging
Mini3-G3-B
JEITA SC-59A
3. Collector
DRC2113Z0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA2113Z
Features
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
1of
R1 1
k
R2 10
k
3
Unit: mm
Min Typ
Internal Connection
Resistance
value
50 V
Collector current IC 100 mA
Collector-emitter voltage (Base open) VCEO
Total power dissipation PT 200 mW
Junction temperature Tj 150 °C
+150 °C
Parameter Symbol Conditions
Storage temperature Tstg -55 to
Max Unit
Collector-base voltage (Emitter open) VCBO
IC = 10 μA, IE = 0 50 V
Collector-emitter voltage (Base open) VCEO
IC = 2 mA, IB = 0 50 V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0 0.1 μA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0 0.5 μA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0 1.5 mA
Forward current transfer ratio hFE
VCE = 10 V, IC = 5 mA 30 -
Collector-emitter saturation voltage VCE(sat)
IC = 10 mA, IB = 0.5 mA 0.25 V
Input voltage
Vi(on)
VCE = 0.2 V, IC = 5 mA
Vi(off)
VCE = 5 V, IC = 100 μA
1.0 V
0.4 V
Input resistance R1
-30% 1 +30%
k
Resistance ratio R1/R2
0.08 0.1 0.12 -
2.8
2.9
1.1
1.5
0.4
1.9
0.16
1
3
(0.95)(0.95)
2
C
B
R
1
R
2
E
