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ADET-5000-TR1

P1-P3P4-P6
ADET-5000
RF Power Detector
Data Sheet
Description
ADET-5000 is a wide bandwidth, wide dynamic range
temperature-compensated diode power detector for
operation from 700 MHz to 2.6 GHz. Its high sensitivity
and wide bandwidth support fast inner-loop calibration
and true envelope sampling of modulated signals for
accurate power leveling of modulated waveforms for use
in cellular handsets and data cards.
ADET-5000 features circuit technology that is aligned
optimally to work with transceivers requiring external
detection for inner-loop power control. Superb tem-
perature and voltage compensation maintains inner-
loop accuracy over extreme operating conditions. In
power-down mode, ADET-5000 presents high output
impedance to the transceiver, minimizing loading of any
other detectors connected to the transceiver detector
input line. This characteristic allows the customer to utilize
ADET-5000 to daisy-chain numerous power ampli er
couplers together with a single detector.
ADET-5000’s nominal input impedance is 100 ohms,
allowing the sensitivity and detection range to be
trimmed externally with a shunt input resistor. This allows
user-adjustability of e ective coupling ratios to maximize
dynamic range and to compensate variable output
power targets and daisy-chain con gurations. ADET-5000
is manufactured on an advanced InGaP HBT (hetero-
junction Bipolar Transistor) MMIC (microwave monolithic
integrated circuit) technology o ering state-of-the-art
reliability, temperature stability and ruggedness
Features
Fully Temperature and Voltage Compensated Diode RF
Detector
-20 dBm to 11 dBm Power Detection Range
Small, Thin Package (1.2 x 1.5 x 0.5 mm)
Complete coverage of 3GPP bands from 700-2600 MHz
Fast Response Time and Wide Bandwidth
High Sensitivity and User-Adjustable Input Range
High Output Impedance in Power Down Mode
Low Harmonic Generation
6-pin surface mounting package
Lead-free, RoHS compliant, Green (Halogen Free)
Applications
CDMA/UMTS/LTE Handsets & Data Cards
2
Absolute Maximum Ratings
No damage assuming only one parameter is set at limit at a time with all other parameters set at or below nominal value
Operation of any single parameter outside these conditions with the remaining parameters set at or below nominal
values may result in permanent damage
Description Max. Unit
RF Input Power (Pin) 13 dBm
DC Supply / Control Voltage (Ven) 3 V
Storage Temperature (Tstg) -30 to +125 C
Recommended Operating Conditions
Description Min. Typ. Max. Unit
Enable Voltage (Ven Low
High
0
2.0
0.2
2.2
0.5
2.7
V
Enable Current (Ien @ Ven = 2.7 V) 800 1000
A
Case Temperature -30 25 85 C
Electrical Characteristics
– Conditions: Ven = 2.2 V, T = 25° C, Zload = 100 kohm in parallel with 12 pF
Characteristics Condition Min. Typ. Max. Unit
Operating Frequency Range 700 – 2600 MHz
Power Detect Range (Pin) -20 – +11 dBm
Average Output Voltage Pin = +9 dBm
Pin = -11.5 dBm
Pin = -12.5 dBm
0.93
0.45
0.45
1.10
0.48
0.47
1.30
0.50
0.49
V
Power Detect Slope Pin = -12.5 dBm 4.3 5.3 9.3 mV/dB
Len (RF input = o ) 150 350 1000
A
DC O set Output Voltage with RF O 450 mV
RF Input Resistance Rext open (not connected) 100 ohms
3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0 0.5 1 1.5 2 2.5 3
Vdet (V)
Frequency (GHz)
0 dBm
-5 dBm
-10 dBm
10 dBm
5 dBm
-30° C
25° C
85° C
-30° C
25° C
85° C
0.4
0.5
0.6
0.7
0.8
0.9
1.1
1.2
-20 -15 -10 -5 0 5 10
Vdet (V)
Pin [dBm]
1
0.44
0.45
0.46
0.47
0.48
0.49
0.5
0.51
0.52
-20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10
Vdet (V)
Pin [dBm]
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
-20.0 -15.0 -10.0 -5.0 0.0 5.0 10.0
Vdet (V)
Pin (dBm)
2.0 V
2.3 V
3.0 V
100 MHz
300 MHz
700 MHz
900 MHz
1900 MHz
2600 MHz
-25 -20 -15 -10 -5 0 5 10
RF Input Power (dBm)
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
Vdet (V)
ADET-5000 Characterization Data
Figure 1. Detector Voltage vs. Input Power over temperature at 1900 MHz,
Ven = 2.2 V
Figure 2. Detector Voltage vs. Input Power over temperature at 1900 MHz,
Ven = 2.2 V
Figure 3. Detector Voltage vs. Input Power at 1900 MHz for Ven = 2.0 V – 3.0 V Figure 4. Detector Voltage vs. Frequency (with 100 Ohm input resistor) from
-20 to -10 dBm input power.
Figure 5. Detector Voltage vs. Frequency from 100-2600MHz over Input Powers,
Ven = 2.2 V
Table 1. Typical RMS Error @ 25C for various modulation schemes.
The reference modulation for the measurement was WCDMA Rel 99
Waveform
Measured
CCDF (PAR)
@ 0.1%
Composite
Typical RMS Error @ 25C (dB)
vs. WCDMA Rel 99 Modulation
Vrms for loop
control voltage
@ 0dBm
Vrms for loop
control voltage
@ 8dBm
WCDMA Rel 99 3.06 0 0
HSDPA1 3.41 0.14 0.12
HSDPA2 3.76 0.19 0.07
HSDPA3 3.86 0.2 -0.01
HSDPA3 3.96 0.11 -0.21
HSUPA Subtest 1 4.46 0 0.03
HSUPA Subtest 2 5.8 0.24 0.3
HSUPA Subtest 3 5.17 0.1 0.04
HSUPA Subtest 4 5.5 0.19 0.05
HSUPA Subtest 5 4.25 -0.02 0.3
HSUPA high PAR 6.4 0.4 0.36
P1-P3P4-P6

ADET-5000-TR1

Mfr. #:
Buy ADET-5000-TR1
Manufacturer:
Broadcom / Avago
Description:
RF Detector Power Detector GaAs RF
Lifecycle:
New from this manufacturer.
Delivery:
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