CZRT55C16-G

SMD Zener Diode
Voltage: 2.4 to 39 Volts
Power: 350 mWatts
RoHS Device
Page 1
REV:B
Features
-Planar die construction
-350mW power dissipation
-Ideally suited for automated assembly
process
-Pb free product are available : 99% Sn
above can meet RoHS
Mechanical data
-Case: SOT-23, Molded plastic
-Terminals: Solderable per MIL-STD-
202G,method 208
-Polarity: See diagram below
-Weight: 0.008 gram(approx.)
-Mounting position: Any
CZRT55C2V4-GThru CZRT55C39-G
Parameter
Symbol
Value
Unit
Maximum Rating And Electrical Characteristics
0.9
V
VF
Forward Voltage (Notes 2)
Dimensions in inches and (millimeter)
Power Dissipation (Notes 1)
350
Pd
mW
QW-BZ014
SOT-23
3
Thermal Resistance, Junction to Ambient Air
357
°C/W
Notes:
1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses,period=5ms,pulse width=300us.
3. f=1KHz
3
1 2
0.118(3.00)
0.110(2.80)
0.055(1.40)
0.047(1.20)
0.079(2.00)
0.071(1.80)
0.041(1.05)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.006(0.15)
0.003(0.08)
0.100(2.55)
0.089(2.25)
0.004(0.10) max
0.012(0.30)
0.020(0.50)
@ IF=10mA
Operating junction and Storage Temperature Range
-65 to +150
TJ
O
C
RθJA
1 2
Page 2
Electrical Characteristics(Ta = 25°C)
REV:B
QW-BZ014
Min. Nom. Max. Max. IZT(mA) Max. IZK(mA) Max. VR(V)
CZRT55C2V4 2.2 2.4 2.6 100 5.0 600 1.0 50 1 Z11
CZRT55C2V7 2.5 2.7 2.9 100 5.0 600 1.0 20 1 Z12
CZRT55C3 2.8 3.0 3.2 95 5.0 600 1.0 10 1 Z13
CZRT55C3V3 3.1 3.3 3.5 95 5.0 600 1.0 5.0 1 Z14
CZRT55C3V6 3.4 3.6 3.8 90 5.0 600 1.0 5.0 1 Z15
CZRT55C3V9 3.7 3.9 4.1 90 5.0 600 1.0 3.0 1 Z16
CZRT55C4V3 4.0 4.3 4.6 90 5.0 600 1.0 3.0 1 Z17
CZRT55C4V7 4.4 4.7 5.0 80 5.0 500 1.0 3.0 2 Z1
CZRT55C5V1 4.8 5.1 5.4 60 5.0 480 1.0 2.0 2 Z2
CZRT55C5V6 5.2 5.6 6.0 40 5.0 400 1.0 1.0 2 Z3
CZRT55C6V2 5.8 6.2 6.6 10 5.0 150 1.0 3.0 4 Z4
CZRT55C6V8 6.4 6.8 7.2 15 5.0 80 1.0 2.0 4 Z5
CZRT55C7V5 7.0 7.5 7.9 15 5.0 80 1.0 1.0 5 Z6
CZRT55C8V2 7.7 8.2 8.7 15 5.0 80 1.0 0.7 5 Z7
CZRT55C9V1 8.5 9.1 9.6 15 5.0 100 1.0 0.5 6 Z8
CZRT55C10 9.4 10 10.6 20 5.0 150 1.0 0.2 7 Z9
CZRT55C11 10.4 11 11.6 20 5.0 150 1.0 0.1 8 Y1
CZRT55C12 11.4 12 12.7 25 5.0 150 1.0 0.1 8 Y2
CZRT55C13 12.4 13 14.1 30 5.0 170 1.0 0.1 8 Y3
CZRT55C15 13.8 15 15.6 30 5.0 200 1.0 0.1 10.5 Y4
CZRT55C16 15.3 16 17.1 40 5.0 200 1.0 0.1 11.2 Y5
CZRT55C18 16.8 18 19.1 45 5.0 225 1.0 0.1 12.6 Y6
CZRT55C20 18.8 20 21.2 55 5.0 225 1.0 0.1 14.0 Y7
CZRT55C22 20.8 22 23.3 55 5.0 250 1.0 0.1 15.4 Y8
CZRT55C24 22.8 24 25.6 70 5.0 250 1.0 0.1 16.8 Y9
CZRT55C27 25.1 27 28.9 80 2.0 300 0.5 0.1 18.9 Y10
CZRT55C30 28.0 30 32.0 80 2.0 300 0.5 0.1 21.0 Y11
CZRT55C33 31.0 33 35.0 80 2.0 325 0.5 0.1 23.1 Y12
CZRT55C36 34.0 36 38.0 90 2.0 350 0.5 0.1 25.2 Y13
CZRT55C39 37.0 39 41.0 130 2.0 350 0.5 0.1 27.3 Y14
Marking
Code
Reverse Current
IR(uA)
Zener Voltage
VZ(V)@IZT
Part Number
Operating
Resistance
ZZT(Ohm)
Rising Operating
Resistance
ZZK(Ohm)
SMD Zener Diode
Page 3
RATING AND CHARACTERISTIC CURVES ( )CZRT55C2V4-G Thru CZRT55C39-GRATING AND CHARACTERISTIC CURVES (CZRT55C2V4-G Thru CZRT55C39-G)
Fig.1- Power Derating Curve
Ambient Temperature , (°C)
0 100 200
500
P
o
w
er
D
o
s
s
o
[
a
t
o
p
m
,
(
m
W)
400
300
200
100
0
Fig.3-Zener Breakdown Characterisitcs
Zener Voltage , (V)
Zener Current , (mA)
0
20
0
40
10
10 20 30
30
O
TJ=25 C
C10
C12
C15
C18
C22
C27
C33
C36
C39
Fig.2- Zener Breakdown Characteristics
Zener Voltage , (V)
Zener Current , (mA)
0
30
0
10
20
1
10
2 3 4 5 6 7 8 9
40
50
C5V6
C6V8
C8V2
O
TJ=25 C
C9V1
C4V7
C3V9
C3V3
C2V7
Test current
IZ=5.0mA
Total Capacitance , (pF)
Fig.4- Total Capacitance vs Nominal Zener Voltage
0 100
10
10
100
1000
TJ = 25°C
VR= 1V
VR= 2V
Nominal Zener Voltage , (V)
VR= 1V
VR= 2V
Test current
IZ=5mA
Test current
IZ=2mA
Note 3
Note 1
REV:B
QW-BZ014
SMD Zener Diode

CZRT55C16-G

Mfr. #:
Manufacturer:
Comchip Technology
Description:
Zener Diodes 0.41W, VR=16V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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